參數(shù)資料
型號： AUIRF1010EZ
元件分類： JFETs
英文描述： 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： ROHS COMPLIANT PACKAGE-3
文件頁數(shù)： 8/15頁
文件大小： 375K
代理商： AUIRF1010EZ
AUIRF1010EZ/S/L
2
www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.077mH,
RG = 25, IAS = 51A, VGS =10V. Part not
recommended for use above this value.
ISD ≤ 51A, di/dt ≤ 260A/s, VDD ≤ V(BR)DSS,
TJ ≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from
0 to 80% VDSS .
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population,
starting TJ = 25°C, L = 0.077mH, RG = 25,
IAS = 51A, VGS =10V.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
S
D
G
S
D
G
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage60
–––
V
ΒVDSS/TJ
Breakdown Voltage Temp. Coefficient –––
0.058 –––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance –––
6.8
8.5
m
VGS(th)
Gate Threshold Voltage2.0
–––
4.0
V
gfs
Forward Transconductance
200
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
A
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
200
nA
Gate-to-Source Reverse Leakage
–––
-200
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
Qg
Total Gate Charge
–––
58
86
nC
Qgs
Gate-to-Source Charge
–––
19
28
Qgd
Gate-to-Drain ("Miller") Charge
–––
21
32
td(on)
Turn-On Delay Time
–––
19
–––
ns
tr
Rise Time
–––
90
–––
td(off)
Turn-Off Delay Time
–––
38
–––
tf
Fall Time
–––
54
–––
LD
Internal Drain Inductance
–––
4.5
–––
nH
Between lead,
6mm (0.25in.)
LS
Internal Source Inductance
–––
7.5
–––
from package
and center of die contact
Ciss
Input Capacitance
–––
2810
–––
pF
Coss
Output Capacitance
–––
420
–––
Crss
Reverse Transfer Capacitance
–––
200
–––
Coss
Output Capacitance
–––
1440
–––
Coss
Output Capacitance
–––
320
–––
Coss eff.
Effective Output Capacitance
–––
510
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
84
(Body Diode)
A
ISM
Pulsed Source Current
–––
340
(Body Diode)
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
41
62
ns
Qrr
Reverse Recovery Charge
–––
54
81
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
VGS = 10V
f
MOSFET symbol
VGS = 0V
VDS = 25V
VGS = 0V, VDS = 48V, = 1.0MHz
Conditions
VGS = 0V, VDS = 0V to 48V
= 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, = 1.0MHz
TJ = 25°C, IF = 51A, VDD = 30V
di/dt = 100A/s
f
TJ = 25°C, IS = 51A, VGS = 0V f
showing the
integral reverse
p-n junction diode.
RG = 7.95
ID = 51A
VDS = 25V, ID = 51A
VDD = 30V
ID = 51A
VGS = 20V
VGS = -20V
VDS = 48V
VGS = 10V f
Conditions
VDS = VGS, ID = 250A
VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 51A f
相關(guān)PDF資料
PDF描述
AUIRF1010EZSTRL 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF1010ZSTRL 94 A, 55 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRF1010ZL 94 A, 55 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AUIRF1010ZS 94 A, 55 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRF1010Z 94 A, 55 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AUIRF1010EZL 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET? Power MOSFET
AUIRF1010EZS 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF1010EZSTRL 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF1010EZSTRR 功能描述:MOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
AUIRF1010Z 功能描述:MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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