參數(shù)資料
型號(hào): AU5780D
廠商: NXP SEMICONDUCTORS
元件分類: 其它接口
英文描述: SAE/J1850/VPW transceiver
中文描述: SPECIALTY INTERFACE CIRCUIT, PDSO8
文件頁(yè)數(shù): 5/10頁(yè)
文件大小: 79K
代理商: AU5780D
Philips Semiconductors
Product specification
AU5780
SAE/J1850/VPW transceiver
1998 Jun 30
5
CONTROL INPUT SUMMARY
TX
/LB
MODE
BIT VALUE
BUS_OUT
RX
(out)
0
0
Loop-back
TX passive (default state)
float
float (high)
1
0
Loop-back
TX active
float
low
0
1
Communication
Transmitter passive
float
bus state
1
1
1
Communication
Transmitter active
high
low
NOTE:
1. RX outputs the bus state. If the bus level is below the receiver threshold (i.e., all transmitters passive), then RX will be floating (i.e., high,
considering external pull-up resistance). Otherwise, if the bus level is above the receiver threshold (i.e., at least one transmitter is active),
then RX will be low.
ABSOLUTE MAXIMUM RATINGS
According to the IEC 134 Absolute Maximum System; operation is not guaranteed under these conditions; all voltages are referenced to pin 8
(GND); positive currents flow into the IC; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
BATT
supply voltage
–20
+24
V
V
BATT.ld
short-term supply voltage
load dump; t < 1s
+50
V
V
BATT.tr1
transient supply voltage
SAE J1113 pulse 1
–100
V
V
BATT.tr2
transient supply voltage
SAE J1113 pulses 2
+150
V
V
BATT.tr3
transient supply voltage
SAE J1113 pulses 3A, 3B
–200
+200
V
V
B
Bus voltage
R
f
> 10 k
;
Rb >10
1
–20
+20
V
V
B.tr1
transient bus voltage
SAE J1113 pulse 1
–50
V
V
B.tr2
transient bus voltage
SAE J1113 pulses 2
+100
V
V
B.tr3
transient bus voltage
SAE J1113 pulses 3A, 3B
–200
+200
V
V
I
DC voltage on pins TX, R/F, RX, /LB
–0.3
7
V
ESD
BATT
ESD capability of BATT pin
Air gap discharge,
R=2k
, C=150pF
–9
+9
kV
ESD
bus
ESD capability of BUS_OUT and BUS_IN pins
Air gap discharge,
R=2k
, C=150pF
–9
+9
kV
ESD
logic
ESD capability of TX, RX, R/F, and /LB pins
Human Body,
R=1.5k
, C=100pF
–2
+2
kV
P
tot
maximum power dissipation
at T
amb
= +125
°
C
164
mW
Θ
JA
thermal impedance
in free air
152
°
C/W
T
amb
operating ambient temperature
–40
+125
°
C
T
stg
storage temperature
–40
+150
°
C
T
vj
NOTE:
1. For bus voltages –20V < V
bus
< –17V and +17V < V
bus
< +20V the current is limited by the external resistors R
b
and R
f
.
junction temperature
–40
+150
°
C
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