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參數(shù)資料
| 型號(hào)： | ATP216 |
| 元件分類： | JFETs |
| 英文描述： | 35 A, 50 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE, ATPAK-3 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 394K |
| 代理商： | ATP216 |
ATP216
No.8985-3/4
A S O
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
-
A
RDS(on) -- VGS
RDS(on) -- Tc
IS -- VSD
SW Time -- ID
Gate-to-Source Voltage, VGS -- V
Case Temperature, Tc --
°C
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
m
Ω
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
m
Ω
Drain Current, ID -- A
Switching
T
ime,
SW
T
ime
-
ns
Drain-to-Source Voltage, VDS -- V
Ciss,
Coss,
Crss
-
pF
Diode Forward Voltage, VSD -- V
Source
Current,
I
S
-
A
| yfs | -- I
D
Forward
T
ransfer
Admittance,
|
y
fs
|
-
S
Ciss, Coss, Crss -- VDS
VGS -- Qg
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
--
V
IT16439
0.1
1.0
2
3
5
7
2
3
5
7
2
3
5
3
2
7
10
0.1
IDP=105A (PW≤10μs)
ID=35A
100
μs
1ms
10ms
100ms
DC
operation
Operation in
this area is
limited by RDS(on).
1.0
23
5 7
2
10
100
35 7
2 3
7
5
10
μs
100
1000
050
10
20
30
40
IT16437
IT16436
IT16435
0
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0.01
7
5
3
2
IT16434
25
°C
--
2
5°
C
f=1MHz
Coss
Crss
Tc
=
7
5°
C
0.1
1.0
2
23
5
23
57
10
35 7
100
7
VGS=0V
100
1000
1.0
3
2
5
7
3
2
5
7
10
3
2
5
7
0.1
1.0
23
5 7
7
23
5
100
VDD=30V
VGS=4.5V
td(off)
tf
td(on)
tr
IT16432
01
0
10
60
8
24
36
57
40
50
20
30
Tc=25
°C
ID=5A
2
0.1
7
5
3
2
10
23
5 7
Ciss
Tc=
--25
°C
75
°C
25
°C
1.0
7
5
3
2
10
100
7
5
3
2
1.0
7
5
3
2
10
7
5
3
100
7
5
3
2
10
1000
100
10000
7
5
7
5
3
2
3
2
7
5
3
2
18A
VDS=10V
IT16433
--60 --40 --20
0
20
40
60
80
100 120 140 160
0
60
10
50
40
30
20
V GS
=2.5V
, I D
=9A
V GS
=4.5V
, I D
=18A
IT16438
0
1
2
3
4
30
510
15
25
20
5
VDS=30V
ID=35A
9A
V GS
=1.8V
, I D
=5A
Tc=25
°C
Single pulse
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATP216_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP216-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ATP218 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP218_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP218-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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