- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51303 > ATP216 35 A, 50 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | ATP216 |
| 元件分類： | JFETs |
| 英文描述： | 35 A, 50 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE, ATPAK-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 394K |
| 代理商： | ATP216 |
ATP216
No.8985-2/4
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
50
V
Zero-Gate Voltage Drain Current
IDSS
VDS=50V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.4
1.4
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=18A
58
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=18A, VGS=4.5V
17
23
mΩ
RDS(on)2
ID=9A, VGS=2.5V
20
28
mΩ
RDS(on)3
ID=5A, VGS=1.8V
30
45
mΩ
Input Capacitance
Ciss
VDS=20V, f=1MHz
2700
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
150
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
110
pF
Turn-ON Delay Time
td(on)
See specied Test Circuit.
27
ns
Rise Time
tr
See specied Test Circuit.
90
ns
Turn-OFF Delay Time
td(off)
See specied Test Circuit.
220
ns
Fall Time
tf
See specied Test Circuit.
105
ns
Total Gate Charge
Qg
VDS=30V, VGS=4.5V, ID=35A
30
nC
Gate-to-Source Charge
Qgs
VDS=30V, VGS=4.5V, ID=35A
5.9
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=30V, VGS=4.5V, ID=35A
7.9
nC
Diode Forward Voltage
VSD
IS=35A, VGS=0V
0.96
1.2
V
Switching Time Test Circuit
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=18A
RL=1.67Ω
VDD=30V
VOUT
ATP216
VIN
4.5V
0V
VIN
ID -- VDS
ID -- VGS
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
--
A
Gate-to-Source Voltage, VGS -- V
Drain
Current,
I
D
--
A
VDS=10V
IT16430
IT16431
0
3.0
2.5
1.5
0
35
15
20
30
25
5
10
1.0
0.1
0.7
0.6
0.5
0.3
0.4
0.2
0.9
0.8
0
50
40
30
1.0
0.5
2.0
20
10
5
45
35
25
15
3.0V
VGS=1.5V
--25
°C
25
°C
T
c=75
°C
8.0V
Tc=25
°C
1.8V
6.0V
2.0V
2.5V
3.5V
4.5V
相關PDF資料 |
PDF描述 |
|---|---|
| ATP602 | 5 A, 600 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP602 | 5 A, 600 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATS-2FREQ | QUARTZ CRYSTAL RESONATOR, 3.579 MHz - 3.999 MHz |
| ATS-1-RFREQ5 | QUARTZ CRYSTAL RESONATOR, 36 MHz - 70 MHz |
| ATS-1-RFREQ4 | QUARTZ CRYSTAL RESONATOR, 30 MHz - 35.999 MHz |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ATP216_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP216-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ATP218 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP218_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP218-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。