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參數(shù)資料
| 型號(hào)： | ATP206 |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 40 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE, ATPAK-3 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大小： | 256K |
| 代理商： | ATP206 |
ATP206
No. A1395-4/4
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
PS
This catalog provides information as of January, 2009. Specications and information herein are subject
to change without notice.
Note on usage : Since the ATP206 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
IT14342
IT14341
IT14343
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30
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IT10478
VDS=20V
ID=40A
0.1
1.0
2
0.1
1.0
10
7
23
5
7
23
5
7
23
5
10
100
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7
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35
15
160
IDP=120A
Operation in
this area is
limited by RDS(on).
Tc=25
°C
Single pulse
DC
operation
100ms
10ms
1ms
100
μs
10
μs
ID=40A
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
-
V
VGS -- Qg
EAS -- Ta
A
valanche
Ener
gy
derating
factor
--
%
Ambient Temperature, Ta --
°C
Drain-to-Source Voltage, VDS -- V
A S O
Drain
Current,
I
D
-
A
Allowable
Power
Dissipation,
P
D
-
W
PD -- Tc
Case Temperature, Tc --
°C
PW
≤10μs
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATP206 | 40 A, 40 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP208 | 90 A, 40 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP208 | 90 A, 40 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP214TL | 75 A, 60 V, 0.0081 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP214 | 75 A, 60 V, 0.0081 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATP206_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP206-TL-H | 功能描述:MOSFET N-CH 40V 40A ATPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| ATP207 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| ATP207_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP207-S-TL-H | 功能描述:MOSFET N-CH 40V 65A ATPAK 制造商:on semiconductor 系列:- 包裝:帶卷（TR） 零件狀態(tài):上次購(gòu)買(mǎi)時(shí)間 FET 類型:- FET 功能:- 漏源極電壓（Vdss）:- 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:- 不同?Id，Vgs 時(shí)的?Rds On（最大值）:- 不同 Id 時(shí)的 Vgs（th）（最大值）:- 不同 Vgs 時(shí)的柵極電荷（Qg）:- 不同 Vds 時(shí)的輸入電容（Ciss）:- 功率 - 最大值:- 工作溫度:150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:ATPAK（2 引線 + 接片） 供應(yīng)商器件封裝:ATPAK 標(biāo)準(zhǔn)包裝:3,000 |
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