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參數(shù)資料
| 型號： | ATP214 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 60 V, 0.0081 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE, ATPAK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 359K |
| 代理商： | ATP214 |
ATP214
No. A1712-1/4
Features
ON-resistance RDS(on)1=6.2mΩ(typ.)
Input Capacitance Ciss=4850pF(typ.)
4V drive
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
75
A
Drain Current (PW≤10μs)
IDP
PW≤10μs, duty cycle≤1%
225
A
Allowable Power Dissipation
PD
Tc=25°C60
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
94
mJ
Avalanche Current *2
IAV
38
A
Note :
*1 VDD=15V, L=100μH, IAV=38A
*2 L≤100μH, Single pulse
Package Dimensions
unit : mm (typ)
7057-001
Ordering number : ENA1712
70710PA TK IM TC-00002343
SANYO Semiconductors
DATA SHEET
ATP214
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
Product & Package Information
Package
: ATPAK
JEITA, JEDEC
: -
Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
Electrical Connection
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
0.7
0.4
0.55
9.5
7.3
0.5
1.7
4.6
6.05
13
2
6.5
0.6
4
0.8
0.5
1.5
0.4
2.6
4.6
0.4
0.1
2.3
TL
ATP214
LOT No.
1
3
2,4
相關PDF資料 |
PDF描述 |
|---|---|
| ATP214 | 75 A, 60 V, 0.0081 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP214TL | 75 A, 60 V, 0.0081 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP216TL | 35 A, 50 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP216 | 35 A, 50 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP602 | 5 A, 600 V, 2.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ATP214_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP214-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ATP216 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP216_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP216-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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