- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51302 > ATP104 75 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | ATP104 |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HALOGEN FREE, ATPAK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 257K |
| 代理商： | ATP104 |
ATP104
No. A1406-1/4
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer
's
products or equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Features
Low ON-resistance.
Large current.
Slim package.
4.5V drive.
Halogen free compliance.
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--75
A
Drain Current (PW≤10μs)
IDP
PW≤10μs, duty cycle≤1%
--225
A
Allowable Power Dissipation
PD
Tc=25°C60
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
130
mJ
Avalanche Current *2
IAV
38
A
Note :
*1 VDD=15V, L=100μH, IAV=38A
*2 L≤100μH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0V
--1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Marking : ATP104
Continued on next page.
Ordering number : ENA1406
20409PA MS IM TC-00001830
SANYO Semiconductors
DATA SHEET
ATP104
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
www.semiconductor-sanyo.com/network
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATP113TL | 35 A, 60 V, 0.0295 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP113 | 35 A, 60 V, 0.0295 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP114TL | 55 A, 60 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP114 | 55 A, 60 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP201 | 35 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATP104_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP-104A060B | 制造商:DMC 功能描述: |
| ATP104-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ATP104-TL-HX | 功能描述:MOSFET P-CH 30V 75A ATPAK 制造商:on semiconductor 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) FET 類型:P 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:75A（Ta） 不同 Id 時的 Vgs（th）（最大值）:- 不同 Vgs 時的柵極電荷?（Qg）（最大值）:76nC @ 10V 不同 Vds 時的輸入電容（Ciss）（最大值）:3950pF @ 10V FET 功能:- 功率耗散（最大值）:60W（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:8.4 毫歐 @ 38A，10V 工作溫度:150°C（TJ） 安裝類型:表面貼裝 供應商器件封裝:ATPAK 封裝/外殼:ATPAK（2 引線 + 接片） 標準包裝:3,000 |
| ATP106 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
發(fā)布緊急采購，3分鐘左右您將得到回復。