型號: | ATP113TL |
元件分類: | JFETs |
英文描述: | 35 A, 60 V, 0.0295 ohm, P-CHANNEL, Si, POWER, MOSFET |
封裝: | HALOGEN FREE, ATPAK-3 |
文件頁數(shù): | 1/4頁 |
文件大?。?/td> | 343K |
代理商: | ATP113TL |
相關(guān)PDF資料 |
PDF描述 |
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ATP113 | 35 A, 60 V, 0.0295 ohm, P-CHANNEL, Si, POWER, MOSFET |
ATP114TL | 55 A, 60 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET |
ATP114 | 55 A, 60 V, 0.016 ohm, P-CHANNEL, Si, POWER, MOSFET |
ATP201 | 35 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET |
ATP201 | 35 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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ATP113-TL-H | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
ATP114 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
ATP114_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
ATP114-TL-H | 功能描述:MOSFET SWITCHING MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
ATP115SM | 制造商:CTS 制造商全稱:CTS Corporation 功能描述:Surface Mount Quartz Crystal |