參數(shù)資料
型號: ATP113TL
元件分類: JFETs
英文描述: 35 A, 60 V, 0.0295 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: HALOGEN FREE, ATPAK-3
文件頁數(shù): 1/4頁
文件大?。?/td> 343K
代理商: ATP113TL
ATP113
No. A1755-1/4
Features
ON-resistance RDS(on)1=22.5mΩ(typ.)
Input Capacitance Ciss=2400pF(typ.)
4V drive
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--35
A
Drain Current (PW≤10μs)
IDP
PW≤10μs, duty cycle≤1%
--105
A
Allowable Power Dissipation
PD
Tc=25°C50
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
95
mJ
Avalanche Current *2
IAV
--18
A
Note :
*1 VDD=--10V, L=500μH, IAV=--18A
*2 L≤500μH, Single pulse
Package Dimensions
unit : mm (typ)
7057-001
Ordering number : ENA1755
72110PA TK IM TC-00002330
SANYO Semiconductors
DATA SHEET
ATP113
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
Product & Package Information
Package
: ATPAK
JEITA, JEDEC
: -
Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
Electrical Connection
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
0.7
0.4
0.55
9.5
7.3
0.5
1.7
4.6
6.05
13
2
6.5
0.6
4
0.8
0.5
1.5
0.4
2.6
4.6
0.4
0.1
2.3
ATP113
LOT No.
TL
1
3
2,4
相關(guān)PDF資料
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ATP113 35 A, 60 V, 0.0295 ohm, P-CHANNEL, Si, POWER, MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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