- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄42904 > ATF-551M4-TR2G (AGILENT TECHNOLOGIES INC) X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET PDF資料下載
參數(shù)資料
| 型號： | ATF-551M4-TR2G |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4 |
| 文件頁數(shù)： | 14/23頁 |
| 文件大?。?/td> | 183K |
| 代理商： | ATF-551M4-TR2G |
21
ATF-551M4 Die Model
GATE
SOURCE
INSIDE Package
Port
G
Num=1
C
C1
C=0.28 pF
Port
S1
Num=2
SOURCE
DRAIN
Port
S2
Num=4
Port
D
Num=3
L
L6
L=0.147 nH
R=0.001
C
C2
C=0.046 pF
L
L7
L=0.234 nH
R=0.001
MSub
TLINP
TL3
Z=Z2 Ohm
L=23.6 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL9
Z=Z2 Ohm
L=11 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
VAR
VAR1
K=5
Z2=85
Z1=30
Var
Egn
TLINP
TL1
Z=Z2/2 Ohm
L=22 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL2
Z=Z2/2 Ohm
L=20 0 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL7
Z=Z2/2 Ohm
L=5.2 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL5
Z=Z2 Ohm
L=27.5 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
L
L1
L=0.234 nH
R=0.001
L
L4
L=0.281 nH
R=0.001
GaAsFET
FET1
Mode1=MESFETM1
Mode=Nonlinear
MSUB
MSub2
H=25.0 mil
Er=9.6
Mur=1
Cond=1.0E+50
Hu=3.9e+034 mil
T=0.15 mil
TanD=0
Rough=0 mil
ATF-551M4 Minipak Model
and if R2 is replaced with a 27K
resistor. This combination should
limit gate current to a safe level.
PCB Layout
A suggested PCB pad print for
the miniature, Minipak 1412
package used by the ATF-551M4
is shown in Figure 3.
0.5
0.020
0.4
0.016
0.4
0.016
1.1
0.043
0.3
0.012
0.5
0.020
0.3
0.012
Figure 3. PCB Pad Print for Minipak 1412.
Package (mm [inches ]).
This pad print provides allow-
ance for package placement by
automated assembly equipment
without adding excessive
parasitics that could impair the
high frequency performance of
the ATF-551M4. The layout is
shown with a footprint of the
ATF-551M4 superimposed on the
PCB pads for reference.
For Further Information
The information presented here is
an introduction to the use of the
ATF-551M4 enhancement mode
PHEMT. More detailed application
circuit information is available
from Agilent Technologies. Consult
the web page or your local Agilent
Technologies sales representative.
NFET=yes
PFET=no
Vto=0.3
Beta=0.444
Lambda=72e-3
Alpha=13
Tau=
Tnom=16.85
Idstc=
Ucrit=-0.72
Vgexp=1.91
Gamds=1e-4
Vtotc=
Betatce=
Rgs=0.5 Ohm
Rf=
Gscap=2
Cgs=0.6193 pF
Cgd=0.1435 pF
Gdcap=2
Fc=0.65
Rgd=0.5 Ohm
Rd=2.025 Ohm
Rg=1.7 Ohm
Rs=0.675 Ohm
Ld=
Lg=0.094 nH
Ls=
Cds=0.100 pF
Rc=390 Ohm
Crf=0.1 F
Gsfwd=
Gsrev=
Gdfwd=
Gdrev=
R1=
R2=
Vbi=0.95
Vbr=
Vjr=
Is=
Ir=
Imax=
Xti=
Eg=
N=
Fnc=1 MHz
R=0.08
P=0.2
C=0.1
Taumdl=no
wVgfwd=
wBvgs=
wBvgd=
wBvds=
wldsmax=
wPmax=
AllParams=
Advanced_Curtice2_Model
MESFETM1
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-551M4-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR1G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-58143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-58143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-58143-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
發(fā)布緊急采購，3分鐘左右您將得到回復。