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ATF-551M4 Absolute Maximum Ratings[1]
Absolute
Symbol
Parameter
Units
Maximum
V
DS
Drain-Source Voltage[2]
V5
V
GS
Gate-Source Voltage[2]
V
-5 to +1
V
GD
Gate Drain Voltage [2]
V
-5 to +1
I
DS
Drain Current [2]
mA
100
I
GS
Gate Current [5]
mA
1
P
diss
Total Power Dissipation [3]
mW
270
P
in max.
RF Input Power
dBm
10
T
CH
Channel Temperature
°C
150
T
STG
Storage Temperature
°C
-65 to 150
θ
jc
Thermal Resistance [4]
°C/W
240
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25
°C. Derate
6 mW/
°C for T
L > 40°C.
4. Thermal resistance measured using
150
°C Liquid Crystal Measurement method.
5. Device can safely handle +10 dBm RF Input
Power provided I
GS is limited to 1 mA. IGS at
P
1dB drive RF level is bias circuit dependent.
See applications section for additional
information.
Product Consistency Distribution Charts [6]
VDS (V)
Figure 1. Typical I-V Curves.
(VGS = 0.1 V per step)
I DS
(mA)
0.4V
0.5V
0.6V
0.7V
0.3V
02
14
6
5
37
70
60
50
40
30
20
10
0
GAIN (dBm)
Figure 2. Capability Plot for Gain @ 2.7 V,
10 mA. LSL = 15.5, Nominal = 17.5,
USL = 18.5
15
17
16
18
19
180
150
120
90
60
30
0
Cpk = 1.64
Stdev = 0.19
-3 Std
+3 Std
OIP3
Figure 3. Capability Plot for OIP3 @ 2.7 V,
10 mA. LSL = 22.0, Nominal = 24.1
22
24
23
25
26
150
120
90
60
30
0
Cpk = 2.85
Stdev = 0.25
-3 Std
NF
Figure 4. Capability Plot for NF @ 2.7 V,
10 mA. Nominal = 0.5, USL = 0.9
0.29
0.69
0.49
0.89
1.09
160
120
80
40
0
Cpk = 2.46
Stdev = 0.06
+3 Std
Note:
6. Distribution data sample size is 398 samples taken from 4 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match
and a realizeable match based on production test equipment. Circuit losses have been de-embedded from actual measurements.
相關(guān)PDF資料 |
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| ATF-551M4-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR1G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-58143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-58143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-58143-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
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