參數(shù)資料
型號： ATF-551M4-TR1
元件分類： 小信號晶體管
英文描述： X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4
文件頁數(shù)： 5/23頁
文件大?。?/td> 406K
代理商： ATF-551M4-TR1
1
ATF-551M4 Typical Scattering Parameters, V
DS = 2.V, IDS = 20 mA
Freq.
S
11
S
21
S
12
S
22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.995
-6.8
22.92
13.988
175.4
0.005
86.4
0.772
-3.4
34.47
0.5
0.943
-33.0
22.35
13.103
155.9
0.024
70.6
0.72
-15.7
27.37
0.9
0.883
-56.9
21.53
11.932
140.7
0.04
59.4
0.662
-27.1
24.75
1.0
0.87
-62.4
21.30
11.616
137.3
0.043
56.9
0.643
-29.6
24.32
1.5
0.798
-87.6
20.00
10.004
121.6
0.056
46.2
0.557
-40.2
22.52
1.9
0.752
-104.9
18.91
8.822
111.0
0.063
39.6
0.494
-46.7
21.46
2.0
0.743
-108.8
18.65
8.557
108.6
0.064
38.2
0.48
-48.1
21.26
2.5
0.704
-126.7
17.35
7.367
97.8
0.069
32.3
0.417
-54.2
20.28
3.0
0.68
-142.1
16.14
6.411
88.4
0.072
27.8
0.367
-59.0
19.50
4.0
0.66
-166.3
14.02
5.026
72.8
0.076
22.0
0.297
-67.2
18.20
5.0
0.662
175.2
12.25
4.095
59.5
0.079
18.6
0.251
-75.7
17.15
6.0
0.664
162.6
10.84
3.483
48.4
0.083
17.4
0.216
-80.7
16.23
7.0
0.667
150.9
9.61
3.022
37.6
0.087
16.1
0.199
-90.4
14.69
8.0
0.67
141.2
8.61
2.695
27.3
0.093
14.8
0.185
-100.6
13.08
9.0
0.679
130.8
7.71
2.429
16.9
0.099
13.0
0.177
-113.5
12.08
10.0
0.677
118.1
6.90
2.213
6.0
0.107
9.9
0.178
-127.2
11.08
11.0
0.683
105.4
6.17
2.034
-4.6
0.116
6.4
0.186
-140.4
10.44
12.0
0.688
91.4
5.46
1.876
-15.8
0.126
1.8
0.198
-152.2
9.85
13.0
0.705
80.9
4.72
1.722
-26.5
0.136
-3.2
0.193
-165.9
9.37
14.0
0.741
66.5
4.03
1.59
-38.3
0.146
-9.8
0.188
173.7
9.78
15.0
0.75
55.0
3.19
1.444
-49.5
0.154
-16.5
0.2
151.1
8.35
16.0
0.803
45.1
2.22
1.291
-60.1
0.159
-23.2
0.224
129.5
9.10
17.0
0.823
37.2
1.26
1.156
-70.3
0.165
-29.8
0.269
107.3
8.45
18.0
0.872
31.0
0.27
1.032
-80.2
0.168
-36.6
0.325
88.8
7.88
Freq
F
min
Γ
opt
Γ
opt
R
n/50
G
a
GHz
dB
Mag.
Ang.
dB
0.5
0.18
0.61
-6.7
0.12
24.89
0.9
0.18
0.55
5.9
0.11
22.72
1.0
0.23
0.49
9.9
0.10
22.68
1.9
0.39
0.43
37.8
0.09
19.18
2.0
0.36
0.42
41.6
0.09
18.98
2.4
0.43
0.37
51.7
0.09
17.83
3.0
0.51
0.29
73.6
0.08
16.69
3.9
0.56
0.26
110.7
0.07
15.19
5.0
0.68
0.28
152.8
0.05
13.79
5.8
0.83
0.33
172.9
0.05
12.91
6.0
0.85
0.33
175.6
0.05
12.73
7.0
0.95
0.37
-162.4
0.06
11.80
8.0
1.06
0.41
-148.8
0.08
11.06
9.0
1.19
0.47
-135.5
0.10
10.47
10.0
1.41
0.46
-119.2
0.17
9.59
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From
these measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at
the end of the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters, V
DS = 2.V, IDS = 20 mA
40
30
20
10
0
-10
Figure 31. MSG/MAG and |S21|2 vs.
Frequency at 2.7V, 20 mA.
FREQUENCY (GHz)
0
20
10
5
15
MSG/MAG
and
|S
21
|
2 (dB)
|S21|
2
MAG
MSG
相關(guān)PDF資料
PDF描述
ATF-551M4-BLK X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
AUIRF1010EZL 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AUIRF1010EZS 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF1010EZSTRR 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
AUIRF1010EZ 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-551M4-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-58143 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-58143-BLK 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-58143-BLKG 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-58143-BLKG 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
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