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參數(shù)資料
| 型號(hào)： | ATF-551M4-TR1 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4 |
| 文件頁(yè)數(shù)： | 13/23頁(yè) |
| 文件大?。?/td> | 406K |
| 代理商： | ATF-551M4-TR1 |
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20
V
DD is the power supply voltage.
V
ds is the device drain to source voltage.
I
ds is the desired drain current.
I
BB is the current flowing through the R1/R2 resistor
voltage divider network.
The value of resistors R1 and R2 are calculated with the
following formulas.
V
gs
p
I
BB
R1 =
(2)
R2 = (Vds – Vgs) R1
gs
(3)
Example Circuit
V
DD = 3V
V
ds = 2.7V
I
ds = 10 mA
V
gs = 0.47V
Choose I
BB to be at least 10X the maximum expected
gate leakage current. I
BB was conservatively chosen to
be 0.5 mA for this example. Using equations (1), (2), and
(3) the resistors are calculated as follows
R1 = 940
R2 = 4460
R3 = 28.6
Active Biasing
Active biasing provides a means of keeping the
quiescent bias point constant over temperature and
constant over lot to lot variations in device dc perfor-
mance. The advantage of the active biasing of an en-
hancement mode PHEMT versus a depletion mode
PHEMT is that a negative power source is not required.
An active bias scheme is shown in Figure 38.
R1 and R2 provide a constant voltage source at the
base of a PNP transistor at Q2. The constant voltage
at the base of Q2 is raised by 0.7 volts at the emitter.
The constant emitter voltage plus the regulated V
DD
supply are present across resistor R3. Constant voltage
across R3 provides a constant current supply for the
drain current. Resistors R1 and R2 are used to set the
desired V
ds. The combined series value of these resistors
also sets the amount of extra current consumed by the
bias network. The equations that describe the circuit’s
operation are as follows.
Rearranging equation (4)provides the following formula
and rearranging equation (5) provides the follow
formula
Example Circuit
V
DD = 3 V
V
ds = 2.7 V
I
ds = 10 mA
R4 = 10
V
BE = 0.7 V
Equation (1) calculates the required voltage at the
emitter of the PNP transistor based on desired V
ds and
I
ds through resistor R4 to be 2.8V. Equation (2) calcu-
lates the value of resistor R3 which determines the drain
current I
ds. In the example R3=18.2. Equation (3) calcu-
lates the voltage required at the junction of resistors R1
and R2. This voltage plus the step-up of the base emitter
junction determines the regulated V
ds. Equations (4) and
(5) are solved simultaneously to determine the value of
resistors R1 and R2. In the example R1=4200 and R2
=1800.
Figure . Typical ATF-551M4 LNA with Active Biasing.
The techniques of active biasing an enhancement mode
device are very similar to those used to bias a bipolar
junction transistor.
INPUT
C1
C2
C3
C7
L1
R5
R6
R7
R3
R2
R1
Q2
Vdd
R4
L2
L3
L4
Q1
Zo
C4
C5
C6
OUTPUT
V
E = Vds + (Ids R4)
(1)
R3 = V
DD – VE
(2)
p
I
ds
V
B = VE – VBE
(3)
V
B =
R1
V
DD
(4)
p
R1 + R2
V
DD = IBB (R1 + R2)
R
1 (VDD – VB)
p
V
B
R1 =
V
DD
(5A)
9
I
BB
( VDD–VB)p
V
B
(5)
(4A)
R2 =
1 +
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PDF描述 |
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| ATF-551M4-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| AUIRF1010EZL | 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| AUIRF1010EZS | 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF1010EZSTRR | 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRF1010EZ | 75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-551M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-58143 | 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLK | 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-58143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
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