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| 型號： | ATF-551M4-TR1 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4 |
| 文件頁數(shù)： | 3/23頁 |
| 文件大?。?/td> | 183K |
| 代理商： | ATF-551M4-TR1 |
11
ATF-551M4 Typical Scattering Parameters,
VDS = 2.7V, IDS = 10 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.995
-5.9
20.55
10.656
175.9
0.006
86.3
0.825
-3.0
32.49
0.5
0.955
-28.7
20.11
10.129
158.4
0.028
72.0
0.782
-14.0
25.58
0.9
0.907
-50.0
19.52
9.466
144.6
0.046
61.3
0.735
-24.5
23.13
1.0
0.896
-55.0
19.36
9.292
141.4
0.050
58.8
0.717
-27.0
22.69
1.5
0.833
-78.6
18.34
8.265
126.1
0.067
47.6
0.639
-37.6
20.91
1.9
0.789
-95.5
17.43
7.439
115.4
0.076
40.0
0.577
-44.6
19.91
2.0
0.779
-99.4
17.21
7.255
113.0
0.078
38.4
0.562
-46.2
19.69
2.5
0.737
-117.4
16.07
6.361
101.7
0.085
31.0
0.495
-53.1
18.74
3.0
0.707
-133.4
14.98
5.610
91.8
0.089
25.1
0.439
-58.8
18.00
4.0
0.679
-159.1
13.01
4.471
75.0
0.093
16.6
0.357
-68.3
16.82
5.0
0.674
-178.9
11.30
3.673
60.8
0.094
10.9
0.303
-77.6
15.92
6.0
0.675
167.3
9.93
3.136
49.1
0.095
8.1
0.264
-83.7
15.19
7.0
0.676
154.9
8.72
2.728
37.7
0.096
5.9
0.244
-93.5
14.54
8.0
0.679
144.5
7.73
2.435
27.0
0.099
4.3
0.230
-104.1
12.94
9.0
0.686
133.5
6.84
2.198
16.2
0.102
2.9
0.222
-116.6
11.58
10.0
0.684
120.8
6.03
2.002
5.1
0.107
0.7
0.222
-129.0
10.44
11.0
0.688
107.5
5.30
1.841
-5.9
0.113
-1.7
0.230
-140.8
9.69
12.0
0.693
93.7
4.59
1.696
-17.2
0.121
-5.2
0.239
-151.9
9.02
13.0
0.710
82.7
3.86
1.559
-28.2
0.129
-8.9
0.232
-164.6
8.47
14.0
0.743
68.6
3.19
1.443
-39.8
0.139
-14.3
0.222
176.6
8.42
15.0
0.760
56.5
2.37
1.314
-51.5
0.147
-20.2
0.232
155.6
7.69
16.0
0.805
46.2
1.42
1.177
-62.2
0.153
-26.2
0.251
134.3
8.26
17.0
0.830
38.1
0.43
1.051
-72.8
0.158
-32.5
0.293
112.0
8.07
18.0
0.872
31.5
-0.58
0.935
-83.1
0.163
-39.1
0.353
92.7
7.59
Freq
Fmin
Γ
opt
Γ
opt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.26
0.64
-4.4
0.14
23.79
0.9
0.27
0.57
7.5
0.13
21.80
1.0
0.30
0.54
11.1
0.13
21.60
1.9
0.46
0.49
36.6
0.11
18.06
2.0
0.41
0.48
40.4
0.12
17.92
2.4
0.47
0.44
50.3
0.11
16.79
3.0
0.55
0.36
69.5
0.10
15.70
3.9
0.61
0.32
101.3
0.08
14.24
5.0
0.74
0.32
139.5
0.06
12.86
5.8
0.88
0.35
161.5
0.05
12.01
6.0
0.90
0.35
163.9
0.05
11.82
7.0
1.00
0.37
-173.6
0.06
10.93
8.0
1.12
0.41
-158.2
0.07
10.24
9.0
1.25
0.46
-143.0
0.09
9.66
10.0
1.46
0.46
-127.2
0.15
8.85
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters,
VDS = 2.7V, IDS = 10 mA
40
30
20
10
0
-10
Figure 29. MSG/MAG and |S21|
2 vs.
Frequency at 2.7V, 10 mA.
FREQUENCY (GHz)
020
10
515
MSG/MAG
and
|S
21
|
2 (dB)
|S21|
2
MAG
MSG
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-551M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR1G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-551M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-58143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-58143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
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