- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄42904 > ATF-551M4-TR1 (AGILENT TECHNOLOGIES INC) X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET PDF資料下載
參數(shù)資料
| 型號(hào)： | ATF-551M4-TR1 |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4 |
| 文件頁數(shù)： | 11/23頁 |
| 文件大?。?/td> | 183K |
| 代理商： | ATF-551M4-TR1 |
19
ATF-551M4 Applications
Information
Introduction
Agilent Technologies’s
ATF-551M4 is a low noise
enhancement mode PHEMT
designed for use in low cost
commercial applications in the
VHF through 10 GHz frequency
range. As opposed to a typical
depletion mode PHEMT where the
gate must be made negative with
respect to the source for proper
operation, an enhancement mode
PHEMT requires that the gate be
made more positive than the
source for normal operation.
Therefore a negative power
supply voltage is not required for
an enhancement mode device.
Biasing an enhancement mode
PHEMT is much like biasing the
typical bipolar junction transistor.
Instead of a 0.7V base to emitter
voltage, the ATF-551M4 enhance-
ment mode PHEMT requires a
nominal 0.47V potential between
the gate and source for a nominal
drain current of 10 mA.
Matching Networks
The techniques for impedance
matching an enhancement mode
device are very similar to those for
matching a depletion mode device.
The only difference is in the
method of supplying gate bias. S
and Noise Parameters for various
bias conditions are listed in this
data sheet. The circuit shown in
Figure 1 shows a typical LNA
circuit normally used for 900 and
1900 MHz applications. Consult
the Agilent Technologies web site
for application notes covering
specific designs and applications.
High pass impedance matching
networks consisting of L1/C1 and
L4/C4 provide the appropriate
match for noise figure, gain, S11
and S22. The high pass structure
also provides low frequency gain
reduction which can be beneficial
from the standpoint of improving
out-of-band rejection.
Capacitors C2 and C5 provide a
low impedance in-band RF
bypass for the matching net-
works. Resistors R3 and R4
provide a very important low
frequency termination for the
device. The resistive termination
improves low frequency stability.
Capacitors C3 and C6 provide
the RF bypass for resistors R3
and R4. Their value should be
chosen carefully as C3 and C6
also provide a termination for
low frequency mixing products.
These mixing products are as a
result of two or more in-band
signals mixing and producing
third order in-band distortion
products. The low frequency or
difference mixing products are
terminated by C3 and C6. For
best suppression of third order
distortion products based on the
CDMA 1.25 MHz signal spacing,
C3 and C6 should be 0.1 uF in
value. Smaller values of capaci-
tance will not suppress the
generation of the 1.25 MHz
difference signal and as a result
will show up as poorer two tone
IP3 results.
INPUT
C1
C2
C3
L1
R4
R1
R2
Vdd
R3
L2
L3
L4
Q1
Zo
C4
C5
C6
OUTPUT
R5
Figure 1. Typical ATF-551M4 LNA with Passive
Biasing.
Bias Networks
One of the major advantages of
the enhancement mode technol-
ogy is that it allows the designer
to be able to dc ground the
source leads and then merely
apply a positive voltage on the
gate to set the desired amount of
quiescent drain current Id.
Whereas a depletion mode
PHEMT pulls maximum drain
current when V
gs= 0 V, an en-
hancement mode PHEMT pulls
only a small amount of leakage
current when V
gs= 0 V. Only when
V
gs is increased above Vth, the
device threshold voltage, will
drain current start to flow. At a
V
ds of 2.7V and a nominal Vgs of
0.47V, the drain current I
d will be
approximately 10 mA. The data
sheet suggests a minimum and
maximum V
gs over which the
desired amount of drain current
will be achieved. It is also impor-
tant to note that if the gate
terminal is left open circuited,
the device will pull some amount
of drain current due to leakage
current creating a voltage differ-
ential between the gate and
source terminals.
Passive Biasing
Passive biasing of the ATF-551M4
is accomplished by the use of a
voltage divider consisting of R1
and R2. The voltage for the
divider is derived from the drain
voltage which provides a form of
voltage feedback through the use
of R3 to help keep drain current
constant. In the case of a typical
depletion mode FET, the voltage
divider which is normally con-
nected to a negative voltage
source is connected to the gate
through resistor R4. Additional
resistance in the form of R5
(approximately 10K
) is added
to provide current limiting for
the gate of enhancement mode
devices such as the ATF-551M4.
This is especially important
when the device is driven to
P1dB or Psat.
Resistor R3 is calculated based
on desired Vds, Ids and available
power supply voltage.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-551M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR1G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-551M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-58143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-58143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。