參數(shù)資料
型號(hào): ATF-551M4-BLK
廠商: AGILENT TECHNOLOGIES INC
元件分類(lèi): 小信號(hào)晶體管
英文描述: X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝: 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4
文件頁(yè)數(shù): 5/23頁(yè)
文件大?。?/td> 183K
代理商: ATF-551M4-BLK
13
ATF-551M4 Typical Scattering Parameters,
VDS = 2.7V, IDS = 20 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.995
-6.8
22.92
13.988
175.4
0.005
86.4
0.772
-3.4
34.47
0.5
0.943
-33.0
22.35
13.103
155.9
0.024
70.6
0.72
-15.7
27.37
0.9
0.883
-56.9
21.53
11.932
140.7
0.04
59.4
0.662
-27.1
24.75
1.0
0.87
-62.4
21.30
11.616
137.3
0.043
56.9
0.643
-29.6
24.32
1.5
0.798
-87.6
20.00
10.004
121.6
0.056
46.2
0.557
-40.2
22.52
1.9
0.752
-104.9
18.91
8.822
111.0
0.063
39.6
0.494
-46.7
21.46
2.0
0.743
-108.8
18.65
8.557
108.6
0.064
38.2
0.48
-48.1
21.26
2.5
0.704
-126.7
17.35
7.367
97.8
0.069
32.3
0.417
-54.2
20.28
3.0
0.68
-142.1
16.14
6.411
88.4
0.072
27.8
0.367
-59.0
19.50
4.0
0.66
-166.3
14.02
5.026
72.8
0.076
22.0
0.297
-67.2
18.20
5.0
0.662
175.2
12.25
4.095
59.5
0.079
18.6
0.251
-75.7
17.15
6.0
0.664
162.6
10.84
3.483
48.4
0.083
17.4
0.216
-80.7
16.23
7.0
0.667
150.9
9.61
3.022
37.6
0.087
16.1
0.199
-90.4
14.69
8.0
0.67
141.2
8.61
2.695
27.3
0.093
14.8
0.185
-100.6
13.08
9.0
0.679
130.8
7.71
2.429
16.9
0.099
13.0
0.177
-113.5
12.08
10.0
0.677
118.1
6.90
2.213
6.0
0.107
9.9
0.178
-127.2
11.08
11.0
0.683
105.4
6.17
2.034
-4.6
0.116
6.4
0.186
-140.4
10.44
12.0
0.688
91.4
5.46
1.876
-15.8
0.126
1.8
0.198
-152.2
9.85
13.0
0.705
80.9
4.72
1.722
-26.5
0.136
-3.2
0.193
-165.9
9.37
14.0
0.741
66.5
4.03
1.59
-38.3
0.146
-9.8
0.188
173.7
9.78
15.0
0.75
55.0
3.19
1.444
-49.5
0.154
-16.5
0.2
151.1
8.35
16.0
0.803
45.1
2.22
1.291
-60.1
0.159
-23.2
0.224
129.5
9.10
17.0
0.823
37.2
1.26
1.156
-70.3
0.165
-29.8
0.269
107.3
8.45
18.0
0.872
31.0
0.27
1.032
-80.2
0.168
-36.6
0.325
88.8
7.88
Freq
Fmin
Γ
opt
Γ
opt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.18
0.61
-6.7
0.12
24.89
0.9
0.18
0.55
5.9
0.11
22.72
1.0
0.23
0.49
9.9
0.10
22.68
1.9
0.39
0.43
37.8
0.09
19.18
2.0
0.36
0.42
41.6
0.09
18.98
2.4
0.43
0.37
51.7
0.09
17.83
3.0
0.51
0.29
73.6
0.08
16.69
3.9
0.56
0.26
110.7
0.07
15.19
5.0
0.68
0.28
152.8
0.05
13.79
5.8
0.83
0.33
172.9
0.05
12.91
6.0
0.85
0.33
175.6
0.05
12.73
7.0
0.95
0.37
-162.4
0.06
11.80
8.0
1.06
0.41
-148.8
0.08
11.06
9.0
1.19
0.47
-135.5
0.10
10.47
10.0
1.41
0.46
-119.2
0.17
9.59
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters,
VDS = 2.7V, IDS = 20 mA
40
30
20
10
0
-10
Figure 31. MSG/MAG and |S21|
2 vs.
Frequency at 2.7V, 20 mA.
FREQUENCY (GHz)
020
10
515
MSG/MAG
and
|S
21
|
2 (dB)
|S21|
2
MAG
MSG
相關(guān)PDF資料
PDF描述
ATF-551M4-BLKG X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-TR1 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-TR2 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-TR1G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-TR2 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
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