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參數(shù)資料
| 型號(hào)： | ATF-551M4-BLK |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | 1.40 MM X 1.20 MM, 0.70 MM HEIGHT, MINIATURE, LEADLESS PACKAGE-4 |
| 文件頁數(shù)： | 20/23頁 |
| 文件大?。?/td> | 183K |
| 代理商： | ATF-551M4-BLK |
6
ATF-551M4 Typical Performance Curves, continued
Notes:
1. Measurements at 2 GHz were made on a
fixed tuned production test board that was
tuned for optimal OIP3 match with reasonable
noise figure at 2.7 V, 10 mA bias. This circuit
represents a trade-off between optimal noise
match, maximum OIP3 match and a realizable
match based on production test board
requirements. Measurements taken above
and below 2 GHz was made using a double
stub tuner at the input tuned for low noise
and a double stub tuner at the output tuned
for maximum OIP3. Circuit losses have been
de-embedded from actual measurements.
2. The Fmin values are based on a set of
16 noise figure measurements made at
16 different impedances using an ATN NP5
test system. From these measurements Fmin
is calculated. Refer to the noise parameter
measurement section for more information.
Figure 16. Gain vs. Bias over Frequency[1].
FREQUENCY (GHz)
GAIN
(dB)
06
3
15
4
2
30
25
20
15
10
5
2V 10 mA
2.7V 10 mA
Figure 17. Fmin vs. Bias over Frequency[2].
FREQUENCY (GHz)
Fmin
(dB)
06
3
15
4
2
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
2V 10 mA
2.7V 10 mA
Figure 18. OIP3 vs. Bias over Frequency[1].
FREQUENCY (GHz)
OIP3
(dBm)
06
3
15
4
2
26
25
24
23
22
21
20
19
18
2V 10 mA
2.7V 10 mA
Figure 19. IIP3 vs. Bias over Frequency[1].
FREQUENCY (GHz)
IIP3
(dBm)
06
3
15
4
2
16
14
12
10
8
6
4
2
0
-2
-4
-6
2V 10 mA
2.7V 10 mA
Figure 20. P1dB vs. Bias over Frequency[1].
FREQUENCY (GHz)
P1dB
(dBm)
06
3
15
4
2
16
15
14
13
12
11
10
2V 10 mA
2.7V 10 mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-551M4-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR1G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-551M4-BLK | 制造商:Avago Technologies 功能描述:Transistor |
| ATF-551M4-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-551M4-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-58143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-58143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
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