參數(shù)資料
型號(hào)： ATF-55143-TR1G
元件分類(lèi)： 小信號(hào)晶體管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： LEAD FREE, PLASTIC, SC-70, 4 PIN
文件頁(yè)數(shù)： 2/21頁(yè)
文件大小： 338K
代理商： ATF-55143-TR1G
10
ATF-55143 Typical Scattering Parameters, V
DS = 2.7V, IDS = 10 mA
Freq.
S
11
S
21
S
12
S
22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.998
6.4
20.86
11.044
174.9
0.006
86.2
0.819
3.9
32.65
0.5
0.963
31.2
20.46
10.549
155
0.026
70.4
0.786
19.1
26.08
0.9
0.896
53.8
19.68
9.641
137.5
0.043
57.3
0.737
32
23.51
1.0
0.881
59.2
19.44
9.376
133.4
0.047
54.4
0.72
34.7
23.00
1.5
0.794
83
18.21
8.133
115.6
0.06
42.2
0.651
46
21.32
1.9
0.732
99.5
17.25
7.284
103.3
0.068
34.4
0.602
52.9
20.30
2.0
0.718
103.4
17.01
7.087
100.6
0.07
32.6
0.592
54.5
20.05
2.5
0.655
122.3
15.94
6.267
87.1
0.076
24.8
0.538
61.3
19.16
3.0
0.608
140.2
14.96
5.599
74.8
0.082
17.9
0.485
67.3
18.34
4.0
0.553
175.9
13.28
4.615
51.7
0.089
5.6
0.39
80.1
17.15
5.0
0.548
150.9
11.74
3.862
30.2
0.092
5.4
0.321
94.7
16.23
6.0
0.556
123.9
10.30
3.272
10.3
0.094
14.6
0.280
109
14.17
7.0
0.573
100.9
9.04
2.83
8.3
0.096
23.9
0.247
124.1
12.29
8.0
0.590
78.6
7.89
2.481
26.5
0.096
32.8
0.204
134.3
10.78
9.0
0.625
58.4
6.94
2.224
44.3
0.102
38
0.152
146.7
9.94
10.0
0.699
39.2
6.03
2.002
63.6
0.112
49.7
0.098
166.8
9.89
11.0
0.752
22.7
4.89
1.755
82.3
0.115
61.1
0.112
100
9.34
12.0
0.789
8.4
3.78
1.546
99.8
0.12
72.4
0.167
62.3
8.81
13.0
0.815
7
2.78
1.378
117.8
0.122
84.7
0.211
37
8.23
14.0
0.838
22.8
1.81
1.231
137
0.124
98.3
0.274
12.6
7.69
15.0
0.862
37.2
0.37
1.044
155.9
0.119
111.8
0.387
7.6
6.82
16.0
0.856
50.5
1.27
0.864
173.3
0.113
124.4
0.491
21.5
5.15
17.0
0.872
59.7
2.73
0.730
171.9
0.111
135.6
0.568
35.9
5.54
18.0
0.915
70
3.96
0.634
156
0.107
149.4
0.628
51.2
5.68
Freq
F
min
Γ
opt
Γ
opt
R
n/50
G
a
GHz
dB
Mag.
Ang.
dB
0.5
0.2
0.64
19
0.12
25.29
0.9
0.26
0.59
22.7
0.12
23.24
1.0
0.27
0.54
26
0.12
22.76
1.9
0.39
0.54
48.3
0.11
19.01
2.0
0.4
0.54
49.9
0.11
18.66
2.4
0.48
0.45
59.8
0.1
17.35
3.0
0.57
0.39
75.6
0.09
15.69
3.9
0.72
0.26
108.7
0.07
13.79
5.0
0.88
0.2
167.5
0.06
12.26
5.8
1.02
0.22
154.8
0.07
11.52
6.0
1.04
0.21
147.8
0.08
11.37
7.0
1.19
0.26
107.9
0.13
10.76
8.0
1.39
0.32
75
0.23
10.2
9.0
1.54
0.41
51.6
0.36
9.48
10.0
1.65
0.53
33.6
0.54
8.38
Notes:
1. F
min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F
min is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes con
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, V
DS = 2.7V, IDS = 10 mA
Figure 29. MSG/MAG and |S21|2 vs.
Frequency at 2.7V, 10 mA.
MSG
|S21|
2
FREQUENCY (GHz)
MSG/MAG
and
|S
21
|
2 (dB)
0
20
10
5
15
35
30
25
20
15
10
5
0
-5
-10
MAG
相關(guān)PDF資料
PDF描述
ATF-55143-TR2 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-55143-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-55143-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-TR2G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-BLK X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-55143-TR2 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-55143-TR2G 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-551M4 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
ATF-551M4-BLK 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-551M4-BLK 制造商:Avago Technologies 功能描述:Transistor
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