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參數(shù)資料
| 型號(hào)： | ATF-55143-TR1G |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 17/21頁 |
| 文件大?。?/td> | 338K |
| 代理商： | ATF-55143-TR1G |
5
ATF-55143 Typical Performance Curves, continued
Figure 15. P1dB vs. Idq and Vds at 2 GHz.[1,2]
Idq (mA)
P1dB
(dBm)
0
35
2V
2.7V
3V
10
5
20
25
30
15
17
16
15
14
13
12
11
10
Figure 16. Gain vs. Ids and Vds at 900 MHz.[1]
Ids (mA)
GAIN
(dB)
0
40
20
10
5
15
25
35
30
2V
2.7V
3V
25
24
23
22
21
20
19
18
Figure 18. OIP3 vs. Ids and Vds at 900 MHz.[1]
Ids (mA)
OIP3
(dBm)
0
35
32
30
28
26
24
22
20
18
16
2V
2.7V
3V
10
5
20
25
30
15
Figure 19. IIP3 vs. Ids and Vds at 900 MHz.[1]
Ids (mA)
IIP3
(dBm)
0
35
7
6
5
4
3
2
1
0
-1
-2
2V
2.7V
3V
10
5
20
25
30
15
Figure 20. P1dB vs. Idq and Vds at
900 MHz.[1,2]
Idq (mA)
P1dB
(dBm)
0
35
17
16
15
14
13
12
11
10
9
2V
2.7V
3V
10
5
20
25
30
15
Figure 17. Fmin vs. Ids and Vds at 900 MHz.
Ids (mA)
Fmin
(dB)
0
35
2V
2.7V
3V
10
5
20
25
30
15
0.35
0.30
0.25
0.20
0.15
0.10
Notes:
1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure
at 2.7 V, 10 mA bias. This circuit represents a tradeoff between optimal noise match, maximum OIP3 match and a realizable match based on
production test board requirements. Measurements taken above and below 2 GHz were made using a double stub tuner at the input tuned for
low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been deembedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, I
dsq, is set with zero RF drive applied. As P1dB is approached,
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
dsq, the device is running close to class
B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is
driven by a constant current source as is typically done with active biasing. As an example, at a V
DS = 2.7V and Idsq = 5 mA, Id increases to 15 mA
as a P1dB of +14.5 dBm is approached.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-55143-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR2G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-55143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-551M4 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-551M4-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-551M4-BLK | 制造商:Avago Technologies 功能描述:Transistor |
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