參數資料
型號: ATF-55143-TR1G
廠商: AGILENT TECHNOLOGIES INC
元件分類: 小信號晶體管
英文描述: C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝: LEAD FREE, PLASTIC, SC-70, 4 PIN
文件頁數: 3/21頁
文件大小: 235K
代理商: ATF-55143-TR1G
11
ATF-55143 Typical Scattering Parameters,
VDS = 2.7V, IDS = 20 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.997
-7.4
23.29
14.603
174.2
0.005
85.8
0.755
-4.4
34.65
0.5
0.947
-35.8
22.72
13.682
152
0.024
69.2
0.713
-21.1
27.56
0.9
0.860
-60.8
21.67
12.116
133
0.038
56.2
0.652
-34.6
25.04
1.0
0.840
-66.6
21.37
11.705
128.8
0.041
53.4
0.633
-37.3
24.56
1.5
0.739
-91.7
19.83
9.802
110.6
0.051
42.4
0.56
-48
22.84
1.9
0.672
-108.6
18.68
8.587
98.5
0.057
36
0.513
-54
21.78
2.0
0.658
-112.7
18.41
8.323
95.8
0.059
34.5
0.503
-55.3
21.49
2.5
0.597
-131.7
17.16
7.21
82.7
0.065
28.4
0.455
-60.9
20.45
3.0
0.554
-149.7
16.04
6.341
70.9
0.069
23
0.409
-65.7
19.63
4.0
0.515
175.4
14.17
5.114
49.1
0.078
13.3
0.328
-76.7
18.17
5.0
0.523
143.7
12.55
4.239
28.6
0.084
3.7
0.267
-90.7
17.03
6.0
0.538
118.2
11.06
3.572
9.6
0.09
-5
0.232
-104.8
14.23
7.0
0.559
96.4
9.78
3.084
-8.4
0.095
-14.7
0.201
-119.6
12.69
8.0
0.579
75.2
8.62
2.699
-25.9
0.098
-24.2
0.162
-127.4
11.32
9.0
0.615
56
7.65
2.413
-43.3
0.107
-31
0.113
-136.5
10.53
10.0
0.690
37.7
6.73
2.171
-62.1
0.117
-44
0.055
160.9
10.46
11.0
0.748
21.7
5.57
1.9
-80.3
0.122
-56.4
0.096
75.9
10.01
12.0
0.787
7.9
4.48
1.675
-97.3
0.126
-68.5
0.164
45.5
9.48
13.0
0.816
-7.3
3.5
1.496
-114.9
0.128
-81.4
0.210
23.7
9.02
14.0
0.841
-22.9
2.55
1.341
-133.5
0.13
-95.1
0.277
3
8.56
15.0
0.867
-37.3
1.15
1.142
-152.1
0.124
-109.2
0.386
-14.3
7.65
16.0
0.862
-50.5
-0.44
0.95
-169
0.118
-121.9
0.483
-26.3
5.86
17.0
0.877
-59.7
-1.83
0.81
176.3
0.116
-133.3
0.555
-39.5
5.25
18.0
0.921
-70
-2.99
0.709
160.6
0.111
-147.1
0.612
-53.9
6.59
Freq
Fmin
Γopt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.20
0.65
17.6
0.1
25.79
0.9
0.25
0.55
23.6
0.1
23.9
1.0
0.26
0.53
28.3
0.1
23.45
1.9
0.39
0.49
49
0.09
19.94
2.0
0.4
0.48
51.5
0.09
19.6
2.4
0.47
0.38
62
0.08
18.34
3.0
0.56
0.32
79.6
0.07
16.71
3.9
0.69
0.19
120
0.06
14.8
5.0
0.85
0.18
-168.8
0.06
13.14
5.8
0.98
0.22
-135.4
0.08
12.3
6.0
1.01
0.22
-128.7
0.09
12.12
7.0
1.15
0.29
-94.6
0.15
11.38
8.0
1.32
0.35
-66.7
0.25
10.74
9.0
1.47
0.44
-45.7
0.38
10.04
10.0
1.58
0.54
-28.6
0.57
9.1
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters,
VDS = 2.7V, IDS = 20 mA
Figure 30. MSG/MAG and |S21|
2 vs.
Frequency at 2.7V, 20 mA.
MSG
|S21|
2
FREQUENCY (GHz)
MSG/MAG
and
|S
21
|
2 (dB)
020
10
515
40
35
30
25
20
15
10
5
0
-5
MAG
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