- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄42904 > ATF-55143-TR1G (AGILENT TECHNOLOGIES INC) C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET PDF資料下載
參數(shù)資料
| 型號： | ATF-55143-TR1G |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 2/21頁 |
| 文件大?。?/td> | 235K |
| 代理商： | ATF-55143-TR1G |
10
ATF-55143 Typical Scattering Parameters,
VDS = 2.7V, IDS = 10 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.998
-6.4
20.86
11.044
174.9
0.006
86.2
0.819
-3.9
32.65
0.5
0.963
-31.2
20.46
10.549
155
0.026
70.4
0.786
-19.1
26.08
0.9
0.896
-53.8
19.68
9.641
137.5
0.043
57.3
0.737
-32
23.51
1.0
0.881
-59.2
19.44
9.376
133.4
0.047
54.4
0.72
-34.7
23.00
1.5
0.794
-83
18.21
8.133
115.6
0.06
42.2
0.651
-46
21.32
1.9
0.732
-99.5
17.25
7.284
103.3
0.068
34.4
0.602
-52.9
20.30
2.0
0.718
-103.4
17.01
7.087
100.6
0.07
32.6
0.592
-54.5
20.05
2.5
0.655
-122.3
15.94
6.267
87.1
0.076
24.8
0.538
-61.3
19.16
3.0
0.608
-140.2
14.96
5.599
74.8
0.082
17.9
0.485
-67.3
18.34
4.0
0.553
-175.9
13.28
4.615
51.7
0.089
5.6
0.39
-80.1
17.15
5.0
0.548
150.9
11.74
3.862
30.2
0.092
-5.4
0.321
-94.7
16.23
6.0
0.556
123.9
10.30
3.272
10.3
0.094
-14.6
0.280
-109
14.17
7.0
0.573
100.9
9.04
2.83
-8.3
0.096
-23.9
0.247
-124.1
12.29
8.0
0.590
78.6
7.89
2.481
-26.5
0.096
-32.8
0.204
-134.3
10.78
9.0
0.625
58.4
6.94
2.224
-44.3
0.102
-38
0.152
-146.7
9.94
10.0
0.699
39.2
6.03
2.002
-63.6
0.112
-49.7
0.098
166.8
9.89
11.0
0.752
22.7
4.89
1.755
-82.3
0.115
-61.1
0.112
100
9.34
12.0
0.789
8.4
3.78
1.546
-99.8
0.12
-72.4
0.167
62.3
8.81
13.0
0.815
-7
2.78
1.378
-117.8
0.122
-84.7
0.211
37
8.23
14.0
0.838
-22.8
1.81
1.231
-137
0.124
-98.3
0.274
12.6
7.69
15.0
0.862
-37.2
0.37
1.044
-155.9
0.119
-111.8
0.387
-7.6
6.82
16.0
0.856
-50.5
-1.27
0.864
-173.3
0.113
-124.4
0.491
-21.5
5.15
17.0
0.872
-59.7
-2.73
0.730
171.9
0.111
-135.6
0.568
-35.9
5.54
18.0
0.915
-70
-3.96
0.634
156
0.107
-149.4
0.628
-51.2
5.68
Freq
Fmin
Γopt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.2
0.64
19
0.12
25.29
0.9
0.26
0.59
22.7
0.12
23.24
1.0
0.27
0.54
26
0.12
22.76
1.9
0.39
0.54
48.3
0.11
19.01
2.0
0.4
0.54
49.9
0.11
18.66
2.4
0.48
0.45
59.8
0.1
17.35
3.0
0.57
0.39
75.6
0.09
15.69
3.9
0.72
0.26
108.7
0.07
13.79
5.0
0.88
0.2
167.5
0.06
12.26
5.8
1.02
0.22
-154.8
0.07
11.52
6.0
1.04
0.21
-147.8
0.08
11.37
7.0
1.19
0.26
-107.9
0.13
10.76
8.0
1.39
0.32
-75
0.23
10.2
9.0
1.54
0.41
-51.6
0.36
9.48
10.0
1.65
0.53
-33.6
0.54
8.38
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters,
VDS = 2.7V, IDS = 10 mA
Figure 29. MSG/MAG and |S21|
2 vs.
Frequency at 2.7V, 10 mA.
MSG
|S21|
2
FREQUENCY (GHz)
MSG/MAG
and
|S
21
|
2 (dB)
020
10
515
35
30
25
20
15
10
5
0
-5
-10
MAG
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-55143-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-55143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-551M4 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-551M4-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-551M4-BLK | 制造商:Avago Technologies 功能描述:Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。