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| 型號： | ATF-55143-BLK |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 5/21頁 |
| 文件大小： | 235K |
| 代理商： | ATF-55143-BLK |
13
ATF-55143 Typical Scattering Parameters,
VDS = 3V, IDS = 30 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.996
-7.9
24.3
16.407
173.9
0.005
85.6
0.729
-4.5
35.16
0.5
0.937
-38.1
23.64
15.205
150.4
0.021
68.8
0.683
-21.2
28.60
0.9
0.840
-64.1
22.44
13.246
130.9
0.034
56.1
0.620
-34.3
25.91
1.0
0.819
-70.1
22.11
12.753
126.6
0.036
53.5
0.601
-36.8
25.49
1.5
0.712
-95.7
20.43
10.507
108.4
0.046
43.4
0.531
-46.5
23.59
1.9
0.646
-112.8
19.2
9.117
96.4
0.051
37.7
0.488
-51.8
22.52
2.0
0.631
-116.8
18.91
8.823
93.7
0.052
36.6
0.479
-52.9
22.30
2.5
0.571
-135.8
17.59
7.578
80.9
0.057
31.3
0.437
-57.7
21.24
3.0
0.531
-153.9
16.42
6.625
69.4
0.062
26.6
0.398
-61.8
20.29
4.0
0.499
171.8
14.49
5.303
48.1
0.071
18.1
0.328
-71.6
18.73
5.0
0.512
140.9
12.84
4.386
28.1
0.078
9.2
0.273
-84.7
16.32
6.0
0.529
116
11.35
3.693
9.4
0.085
0.7
0.242
-98.5
14.36
7.0
0.552
94.7
10.07
3.188
-8.3
0.092
-9
0.214
-112.9
12.98
8.0
0.573
73.9
8.91
2.79
-25.6
0.096
-18.6
0.179
-120.5
11.65
9.0
0.609
55.1
7.94
2.496
-42.7
0.107
-25.8
0.134
-128.4
10.92
10.0
0.684
37.3
7.05
2.251
-61.3
0.118
-39.2
0.064
-173.3
10.93
11.0
0.744
21.6
5.91
1.975
-79.5
0.123
-51.9
0.075
87.5
10.53
12.0
0.786
7.9
4.83
1.744
-96.4
0.128
-64.3
0.141
49.7
10.16
13.0
0.816
-7.2
3.86
1.56
-113.9
0.131
-77.5
0.187
26.4
9.84
14.0
0.842
-22.8
2.93
1.401
-132.6
0.133
-91.7
0.250
5.1
9.51
15.0
0.870
-37.1
1.56
1.197
-151.1
0.128
-106
0.367
-12.6
8.39
16.0
0.866
-50.3
-0.01
0.998
-168.2
0.122
-119.1
0.467
-24.8
6.39
17.0
0.882
-59.7
-1.4
0.851
177
0.12
-130.8
0.543
-38.2
5.77
18.0
0.927
-69.9
-2.55
0.746
161.2
0.115
-144.8
0.602
-52.8
8.12
Freq
Fmin
Γopt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.19
0.59
18.4
0.09
26.27
0.9
0.25
0.5
25.5
0.09
24.41
1.0
0.26
0.52
30.7
0.09
23.98
1.9
0.41
0.44
50.6
0.08
20.51
2.0
0.42
0.43
54.5
0.08
20.18
2.4
0.49
0.34
65.1
0.08
18.92
3.0
0.59
0.27
84.7
0.07
17.28
3.9
0.72
0.17
132.6
0.06
15.33
5.0
0.88
0.19
-156.2
0.06
13.61
5.8
1.02
0.24
-125.3
0.09
12.71
6.0
1.06
0.25
-118.8
0.1
12.52
7.0
1.2
0.32
-88.8
0.17
11.73
8.0
1.37
0.39
-62.7
0.28
11.08
9.0
1.53
0.47
-43.1
0.43
10.41
10.0
1.66
0.57
-27
0.65
9.58
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F
min is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters,
VDS = 3V, IDS = 30 mA
Figure 32. MSG/MAG and |S21|
2 vs.
Frequency at 3V, 30 mA.
MSG
|S21|
2
FREQUENCY (GHz)
MSG/MAG
and
|S
21
|
2 (dB)
020
10
515
40
35
30
25
20
15
10
5
0
-5
MAG
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-55143-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-55143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-55143-BLKG | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
| ATF-55143-TR1 | 功能描述:IC TRANS E-PHEMT 2GHZ SOT-343 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| ATF-55143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-55143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
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