- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄42904 > ATF-55143-BLK (AGILENT TECHNOLOGIES INC) C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET PDF資料下載
參數(shù)資料
| 型號： | ATF-55143-BLK |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 15/21頁 |
| 文件大小： | 235K |
| 代理商： | ATF-55143-BLK |
3
ATF-55143 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameter and Test Condition
Units
Min.
Typ.[2]
Max.
Vgs
Operational Gate Voltage
Vds = 2.7V, Ids = 10 mA
V
0.3
0.47
0.65
Vth
Threshold Voltage
Vds = 2.7V, Ids = 2 mA
V
0.18
0.37
0.53
Idss
Saturated Drain Current
Vds = 2.7V, Vgs = 0V
A
—
0.1
3
Gm
Transconductance
Vds = 2.7V, gm =
Idss/Vgs;
mmho
110
220
285
Vgs = 0.75 – 0.7 = 0.05V
Igss
Gate Leakage Current
Vgd = Vgs = -2.7V
A—
—
95
NF
Noise Figure [1]
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
dB
—
0.6
0.9
f = 900 MHz
Vds = 2.7V, Ids = 10 mA
dB
—
0.3
—
Ga
Associated Gain [1]
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
dB
15.5
17.7
18.5
f = 900 MHz
Vds = 2.7V, Ids = 10 mA
dB
—
21.6
—
OIP3
Output 3rd Order
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
dBm
22.0
24.2
—
Intercept Point [1]
f = 900 MHz
Vds = 2.7V, Ids = 10 mA
dBm
—
22.3
—
P1dB
1dB Compressed
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
dBm
—
14.4
—
Output Power [1]
f = 900 MHz
Vds = 2.7V, Ids = 10 mA
dBm
—
14.2
—
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values determined from a sample size of 500 parts from 6 wafers.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.4
Γ_ang = 83°
(0.3 dB loss)
Output
Matching Circuit
Γ_mag = 0.5
Γ_ang = -26°
(1.2 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.3 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, OIP3, and IIP3 measurements. This circuit
represents a trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses
have been de-embedded from actual measurements.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-55143-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-55143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-55143-BLKG | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
| ATF-55143-TR1 | 功能描述:IC TRANS E-PHEMT 2GHZ SOT-343 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| ATF-55143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-55143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。