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參數(shù)資料
| 型號： | ATF-54143-TR1G |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 6/17頁 |
| 文件大小： | 212K |
| 代理商： | ATF-54143-TR1G |
14
Noise Parameter Applications
Information
F
min values at 2 GHz and higher
are based on measurements
while the F
mins below 2 GHz have
been extrapolated. The F
min
values are based on a set of
16 noise figure measurements
made at 16 different impedances
using an ATN NP5 test system.
From these measurements, a true
F
min is calculated. Fmin repre-
sents the true minimum noise
figure of the device when the
device is presented with an
impedance matching network
that transforms the source
impedance, typically 50
, to an
impedance represented by the
reflection coefficient G
o. The
designer must design a matching
network that will present G
o to
the device with minimal associ-
ated circuit losses. The noise
figure of the completed amplifier
is equal to the noise figure of the
device plus the losses of the
matching network preceding the
device. The noise figure of the
device is equal to F
min only when
the device is presented with G
o.
If the reflection coefficient of the
matching network is other than
G
o
, then the noise figure of the
device will be greater than F
min
based on the following equation.
NF = Fmin + 4 Rn
|
Γs – Γo |
2
Zo (|1 +
Γo|
2)(1 - |Γs|2)
Where Rn/Zo is the normalized
noise resistance,
Γo is the opti-
mum reflection coefficient
required to produce Fmin and Γs is
the reflection coefficient of the
source impedance actually
presented to the device. The
losses of the matching networks
are non-zero and they will also
add to the noise figure of the
device creating a higher amplifier
noise figure. The losses of the
matching networks are related to
the Q of the components and
associated printed circuit board
loss.
Γo is typically fairly low at
higher frequencies and increases
as frequency is lowered. Larger
gate width devices will typically
have a lower
Γo as compared to
narrower gate width devices.
Typically for FETs, the higher
Γo
usually infers that an impedance
much higher than 50
is required
for the device to produce Fmin. At
VHF frequencies and even lower
L Band frequencies, the required
impedance can be in the vicinity
of several thousand ohms. Match-
ing to such a high impedance
requires very hi-Q components in
order to minimize circuit losses.
As an example at 900 MHz, when
airwwound coils (Q > 100) are
used for matching networks, the
loss can still be up to 0.25 dB
which will add directly to the
noise figure of the device. Using
muiltilayer molded inductors with
Qs in the 30 to 50 range results in
additional loss over the airwound
coil. Losses as high as 0.5 dB or
greater add to the typical 0.15 dB
Fmin of the device creating an
amplifier noise figure of nearly
0.65 dB. A discussion concerning
calculated and measured circuit
losses and their effect on ampli-
fier noise figure is covered in
Agilent Application 1085.
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PDF描述 |
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| ATF-541M4-TR1G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-TR2G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-54143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-541M4 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-541M4-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-541M4-BLK | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
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