參數(shù)資料
型號(hào)： ATF-54143-TR1
元件分類(lèi)： 小信號(hào)晶體管
英文描述： C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封裝： PLASTIC, SC-70, 4 PIN
文件頁(yè)數(shù)： 2/17頁(yè)
文件大?。?/td> 305K
代理商： ATF-54143-TR1
10
Figure 1. Typical ATF-54143 LNA with Passive Biasing.
Capacitors C2 and C5 provide a low impedance inband
RF bypass for the matching networks. Resistors R3 and
R4 provide a very important low frequency termina
tion for the device. The resistive termination improves
low frequency stability. Capacitors C3 and C6 provide
the low frequency RF bypass for resistors R3 and R4.
Their value should be chosen carefully as C3 and C6
also provide a termination for low frequency mixing
ATF-54143 Applications Information
Introduction
Avago Technologies’ ATF54143 is a low noise
enhancement mode PHEMT designed for use in low
cost commercial applications in the VHF through 6 GHz
frequency range. As opposed to a typical depletion
mode PHEMT where the gate must be made negative
with respect to the source for proper operation, an
enhancement mode PHEMT requires that the gate
be made more positive than the source for normal
operation. Therefore a negative power supply voltage is
not required for an enhancement mode device. Biasing
an enhancement mode PHEMT is much like biasing the
typical bipolar junction transistor. Instead of a 0.7V base
to emitter voltage, the ATF54143 enhancement mode
PHEMT requires about a 0.6V potential between the
gate and source for a nominal drain current of 60 mA.
Matching Networks
The techniques for impedance matching an en
hancement mode device are very similar to those for
matching a depletion mode device. The only difference
is in the method of supplying gate bias. S and Noise
Parameters for various bias conditions are listed in
this data sheet. The circuit shown in Figure 1 shows a
typical LNA circuit normally used for 900 and 1900 MHz
applications (Consult the Avago Technologies website
for application notes covering specific applications).
High pass impedance matching networks consisting
of L1/C1 and L4/C4 provide the appropriate match for
noise figure, gain, S11 and S22. The high pass structure
also provides low frequency gain reduction which can
be beneficial from the standpoint of improving outof
band rejection at lower frequencies.
products. These mixing products are as a result of two
or more inband signals mixing and producing third
order inband distortion products. The low frequency or
difference mixing products are bypassed by C3 and C6.
For best suppression of third order distortion products
based on the CDMA 1.25 MHz signal spacing, C3 and C6
should be 0.1 F in value. Smaller values of capacitance
will not suppress the generation of the 1.25 MHz differ
ence signal and as a result will show up as poorer two
tone IP3 results.
BiasNetworks
One of the major advantages of the enhancement mode
technology is that it allows the designer to be able to dc
ground the source leads and then merely apply a positive
voltage on the gate to set the desired amount of quiescent
drain current Id.
Whereas a depletion mode PHEMT pulls maximum
drain current when Vgs = 0V, an enhancement mode
PHEMT pulls only a small amount of leakage current
when Vgs=0V. Only when Vgs is increased above Vto,
the device threshold voltage, will drain current start to
flow. At a Vds of 3V and a nominal Vgs of 0.6V, the drain
current Id will be approximately 60 mA. The data sheet
suggests a minimum and maximum Vgs over which
the desired amount of drain current will be achieved.
It is also important to note that if the gate terminal is
left open circuited, the device will pull some amount of
drain current due to leakage current creating a voltage
differential between the gate and source terminals.
PassiveBiasing
Passive biasing of the ATF54143 is accomplished by
the use of a voltage divider consisting of R1 and R2. The
voltage for the divider is derived from the drain voltage
which provides a form of voltage feedback through the
use of R3 to help keep drain current constant. Resistor
R5 (approximately 10kW) provides current limiting for
the gate of enhancement mode devices such as the
ATF54143. This is especially important when the device
is driven to P1dB or PSAT.
Resistor R3 is calculated based on desired Vds, Ids and
available power supply voltage.
R3 = VDD – Vds (1)
p
Ids + IBB
VDD is the power supply voltage.
Vds is the device drain to source voltage.
Ids is the desired drain current.
IBB is the current flowing through the R1/R2 resistor
voltage divider network.
Vdd
Zo
L2
L3
C2
C3
L1
J1
R4
R5
C5
C6
L4
R3
R1
R2
C1
Zo
C4
Q1
OUTPUT
INPUT
J2
相關(guān)PDF資料
PDF描述
ATF-54143-TR2 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR1G C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-BLKG C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR2G C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR1 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-54143-TR1G 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-54143-TR2 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-54143-TR2G 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-541M4 制造商:AGILENT 制造商全稱(chēng):AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
ATF-541M4-BLK 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
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