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| 型號(hào)： | ATF-54143-BLKG |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件頁(yè)數(shù)： | 16/17頁(yè) |
| 文件大?。?/td> | 307K |
| 代理商： | ATF-54143-BLKG |
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ATF-54143 Typical Scattering Parameters, VDS = 3V, IDS= 80 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.98
20.4
28.32
26.05
167.1
0.01
79.4
0.26
27.6
34.16
0.5
0.80
85.9
25.32
18.45
126.8
0.04
53.3
0.29
104.9
26.64
0.9
0.72
123.4
22.10
12.73
105.2
0.05
43.9
0.30
138.8
24.06
1.0
0.70
129.9
21.40
11.75
101.3
0.05
42.7
0.30
144.3
23.71
1.5
0.66
154.6
18.55
8.46
85.4
0.06
38.6
0.30
165.0
21.49
1.9
0.65
169.5
16.81
6.92
74.9
0.07
35.7
0.29
177.6
19.95
2.0
0.64
172.8
16.42
6.62
72.6
0.07
35.0
0.29
179.4
19.76
2.5
0.64
172.1
14.69
5.42
61.1
0.09
30.6
0.29
164.4
17.80
3.0
0.63
158.5
13.24
4.59
50.1
0.10
25.5
0.29
150.2
16.62
4.0
0.66
133.8
10.81
3.47
29.9
0.12
13.4
0.33
126.1
14.61
5.0
0.69
112.5
8.74
2.74
11.1
0.13
1.2
0.39
107.8
12.03
6.0
0.72
94.3
7.03
2.25
6.5
0.14
11.3
0.42
91.8
10.52
7.0
0.73
77.4
5.63
1.91
23.5
0.15
24.5
0.44
75.5
9.12
8.0
0.74
59.4
4.26
1.63
41.1
0.16
38.1
0.47
55.5
7.78
9.0
0.78
42.1
2.98
1.41
58.7
0.17
51.1
0.52
37.8
7.12
10.0
0.84
25.6
1.51
1.19
76.4
0.16
66.8
0.59
24.0
6.96
11.0
0.86
11.4
0.00
1.00
92.0
0.16
79.8
0.64
11.8
6.11
12.0
0.88
2.6
1.15
0.88
105.9
0.16
91.7
0.68
0.8
5.67
13.0
0.89
17.0
2.18
0.78
121.7
0.15
105.6
0.70
16.7
5.08
14.0
0.87
33.3
3.48
0.67
138.7
0.14
119.5
0.73
31.7
3.67
15.0
0.87
47.3
5.02
0.56
153.9
0.13
132.3
0.76
44.9
2.65
16.0
0.86
55.6
6.65
0.47
165.9
0.12
141.7
0.78
54.9
1.48
17.0
0.86
63.4
7.92
0.40
175.9
0.11
150.4
0.79
64.2
0.49
18.0
0.91
74.2
8.92
0.36
171.2
0.10
163.0
0.81
76.2
1.29
Freq
Fmin
Γopt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.19
0.23
66.9
0.04
27.93
0.9
0.24
84.3
0.04
24.13
1.0
0.25
87.3
0.04
23.30
1.9
0.43
0.28
134.8
0.04
18.55
2.0
0.42
0.29
138.8
0.04
18.15
2.4
0.51
0.30
159.5
0.03
16.44
3.0
0.61
0.35
173
0.03
15.13
3.9
0.70
0.41
141.6
0.06
12.97
5.0
0.94
0.52
113.5
0.13
11.42
5.8
1.20
0.56
97.1
0.23
10.48
6.0
1.26
0.58
94.8
0.26
10.11
7.0
1.34
0.62
75.8
0.46
8.86
8.0
1.74
0.63
55.5
0.76
7.59
9.0
1.82
0.71
37.7
1.17
6.97
10.0
1.94
0.79
20.8
1.74
6.65
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true
Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes con
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, VDS = 3V, IDS= 80 mA
Figure 21. MSG/MAG and |S21|2 vs.
Frequency at 3V, 80 mA.
MAG
S21
FREQUENCY (GHz)
MSG/MAG
and
S
21
(dB)
0
20
10
5
15
40
35
30
25
20
15
10
5
0
-5
10
-15
MSG
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-54143-TR2G | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR1 | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-BLK | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-BLKG | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR1G | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-54143-TR1 | 功能描述:IC TRANS E-PHEMT 2GHZ SOT-343 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測(cè)試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測(cè)試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁(yè)面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| ATF-54143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-54143-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-541M4 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package |
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