參數(shù)資料
型號： ATF-531P8-TR2G
元件分類： 小信號晶體管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝： 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8
文件頁數(shù)： 16/16頁
文件大?。?/td> 142K
代理商： ATF-531P8-TR2G
9
Freq
Fmin
Γopt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.18
0.20
166.00
0.014
28.57
0.9
0.26
0.25
169.00
0.018
24.42
1
0.35
171.00
0.021
24.32
1.5
0.40
173.00
0.021
21.25
2
0.51
0.47
177.20
0.022
19.35
2.4
0.56
0.51
-174.50
0.022
17.66
3
0.60
0.56
-169.30
0.023
16.37
3.5
0.73
0.60
-162.90
0.030
15.09
3.9
0.83
0.66
-157.60
0.040
14.82
5
1.03
0.68
-145.50
0.085
12.76
5.8
1.15
0.72
-137.10
0.140
11.55
6
1.20
0.72
-135.20
0.160
11.31
7
1.34
0.78
-126.70
0.300
10.55
8
1.57
0.83
-117.00
0.630
9.81
9
1.78
0.82
-107.90
0.880
8.86
10
1.83
0.85
-95.70
1.460
8.17
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
Typical Noise Parameters, VDS = 4V, IDS = 135 mA
Figure 29. MSG/MAG & |S21|
2 (dB)
@ 4V, 135 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
0
5
10
15
20
MSG/MAG
&
|S21|
2
(dB)
S21
MAG
MSG
ATF-531P8 Typical Scattering Parameters, VDS = 4V, IDS = 135 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.812
-56.4
34.07
50.547
151.8
-38.42
0.012
62.6
0.449
-49.1
36.25
0.2
0.820
-94.6
31.95
39.582
132.2
-34.89
0.018
45.8
0.425
-85.0
33.42
0.3
0.834
-117.3
29.87
31.147
120.2
-33.15
0.022
36.5
0.397
-108.1
31.51
0.4
0.842
-132.4
27.99
25.104
111.8
-32.40
0.024
30.5
0.385
-123.7
30.20
0.5
0.846
-141.4
26.46
21.036
106.3
-32.04
0.025
27.0
0.379
-132.5
29.25
0.6
0.849
-148.7
25.08
17.954
101.6
-31.70
0.026
24.8
0.375
-140.4
28.39
0.7
0.853
-154.4
23.88
15.628
97.9
-31.70
0.026
23.2
0.372
-146.4
27.79
0.8
0.853
-159.0
22.80
13.809
94.8
-31.37
0.027
22.4
0.372
-151.0
27.09
0.9
0.855
-162.7
21.85
12.376
92.0
-31.37
0.027
21.7
0.371
-154.9
26.61
1
0.857
-166.0
20.97
11.186
89.6
-31.37
0.027
21.2
0.369
-157.9
26.17
1.5
0.857
-177.3
17.58
7.568
79.7
-30.75
0.029
21.4
0.366
-168.7
24.17
1.9
0.857
176.2
15.57
6.007
73.3
-30.17
0.031
21.7
0.366
-174.2
22.87
2
0.853
174.7
15.34
5.847
72.0
-29.90
0.032
22.5
0.347
-174.8
22.62
2.4
0.852
169.2
13.77
4.879
66.0
-29.37
0.034
23.0
0.351
-179.7
21.57
3
0.853
161.7
11.80
3.889
57.6
-28.64
0.037
24.1
0.358
174.2
20.22
4
0.857
150.8
9.24
2.896
44.6
-27.54
0.042
23.9
0.375
165.7
16.28
5
0.861
140.9
7.18
2.285
31.8
-26.38
0.048
22.2
0.396
157.8
14.11
6
0.866
131.6
5.45
1.873
19.7
-25.19
0.055
18.6
0.417
149.6
12.50
7
0.867
123.5
4.02
1.589
7.9
-24.29
0.061
15.1
0.440
141.8
11.10
8
0.875
115.1
2.72
1.367
-3.8
-23.22
0.069
10.4
0.459
133.4
10.16
9
0.877
106.9
1.76
1.224
-15.3
-22.16
0.078
4.8
0.474
124.8
9.40
10
0.884
95.6
0.71
1.085
-28.2
-21.31
0.086
-2.6
0.496
114.1
8.69
11
0.889
85.3
-0.34
0.962
-41.0
-20.63
0.093
-10.7
0.511
103.7
7.93
12
0.872
73.9
-1.33
0.858
-51.7
-19.91
0.101
-18.3
0.548
95.1
6.24
13
0.878
63.6
-2.48
0.752
-64.0
-19.58
0.105
-26.2
0.600
84.0
5.55
14
0.886
57.6
-3.57
0.663
-73.7
-19.02
0.112
-33.3
0.640
73.1
5.05
15
0.902
47.2
-4.66
0.585
-84.8
-18.79
0.115
-42.0
0.663
64.4
4.93
16
0.902
43.7
-5.56
0.527
-91.3
-18.49
0.119
-49.2
0.698
54.7
4.37
17
0.895
32.1
-6.99
0.447
-101.9
-18.49
0.119
-56.7
0.746
46.5
2.93
18
0.932
20.6
-8.75
0.365
-109.6
-18.94
0.113
-63.9
0.716
38.2
2.36
相關(guān)PDF資料
PDF描述
ATF-531P8-TR2 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-531P8-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-531P8-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-531P8-TR2 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-54143-BLK C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF54143 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-54143 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343
ATF-54143-BLK 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-54143-BLKG 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-54143-TR1 功能描述:IC TRANS E-PHEMT 2GHZ SOT-343 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
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