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參數(shù)資料
| 型號： | ATF-531P8-TR1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封裝： | 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, PLASTIC, DFP-N, LCC-8 |
| 文件頁數(shù)： | 11/15頁 |
| 文件大小： | 248K |
| 代理商： | ATF-531P8-TR1 |
5
ATF-531P8 Typical Performance Curves (at 5°C unless specified otherwise)
Tuned for Optimal OIP3
Note:
Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. The objective
of load pull is to optimize OIP3 and therefore may tradeoff Small Signal Gain, P1dB and VSWR.
Figure 8. OIP3 vs. Ids and Vds at 900 MHz.
3V
4V
5V
Ids (mA)
45
40
35
30
25
20
75
180
105
90
135
150
165
120
OIP3
(dBm)
Figure 9. OIP3 vs. Ids and Vds at 2 GHz.
3V
4V
5V
Ids (mA)
45
40
35
30
25
20
75
180
105
90
135
150
165
120
OIP3
(dBm)
Figure 10. OIP3 vs. Ids and Vds at 3.9 GHz.
3V
4V
5V
Ids (mA)
45
40
35
30
25
20
75
180
105
90
135
150
165
120
OIP3
(dBm)
Figure 11. Small Signal Gain vs. Ids and Vds
at 900 MHz.
3V
4V
5V
Ids (mA)
17
16
15
14
13
12
11
10
75
180
105
90
135
150
165
120
GAIN
(dB)
Figure 12. Small Signal Gain vs. Ids and Vds
at 2 GHz.
3V
4V
5V
Ids (mA)
17
16
15
14
13
12
11
10
75
180
105
90
135
150
165
120
GAIN
(dB)
Figure 13. Small Signal Gain vs. Ids and Vds
at 3.9 GHz.
3V
4V
5V
Ids (mA)
12
10
8
6
4
2
0
75
180
105
90
135
150
165
120
GAIN
(dB)
Figure 14. P1dB vs. Idq and Vds at 900 MHz.
3V
4V
5V
Idq (mA)
30
25
20
15
10
75
180
105
90
135
150
165
120
P1dB
(dBm)
Figure 15. P1dB vs. Idq and Vds at 2 GHz.
3V
4V
5V
Idq (mA)
30
25
20
15
10
75
180
105
90
135
150
165
120
P1dB
(dBm)
Figure 16. P1dB vs. Idq and Vds at 3.9 GHz.
3V
4V
5V
Idq (mA)
30
25
20
15
10
75
180
105
90
135
150
165
120
P1dB
(dBM)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-531P8-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-54143-BLK | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR1 | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR2 | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-531P8-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF54143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
| ATF-54143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
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