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參數(shù)資料
| 型號： | ATF-531P8-BLKG |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封裝： | 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 142K |
| 代理商： | ATF-531P8-BLKG |
2
ATF-531P8 Absolute Maximum Ratings[1]
Absolute
Symbol
Parameter
Units
Maximum
V
DS
Drain–Source Voltage[2]
V7
V
GS
Gate–Source Voltage[2]
V
-5 to 1
V
GD
Gate Drain Voltage[2]
V
-5 to 1
I
DS
Drain Current[2]
mA
300
I
GS
Gate Current
mA
20
P
diss
Total Power Dissipation[3]
W1
P
in max.
RF Input Power
dBm
+24
T
CH
Channel Temperature
°C
150
T
STG
Storage Temperature
°C
-65 to 150
θch_b
Thermal Resistance[4]
°C/W
63
Notes:
1. Operation of this device in excess of any one
of these parameters may cause permanent
damage.
2. Assumes DC quiescent conditions.
3. Board (package belly) temperatureTB is 25°C.
Derate 16 mW/
°C for TB > 87°C.
4. Thermal resistance measured using
150
°C Liquid Crystal Measurement method.
5. Device can safely handle +24 dBm RF Input
Power provided IGS is limited to 20mA. IGS
at P1dB drive level is bias circuit dependent.
Product Consistency Distribution Charts at 2 GHz, 4V, 135 mA[5,6]
NF (dB)
Figure 2. NF
Nominal = 0.6, USL = 1.0.
0
0.6
0.3
0.9
1.2
180
150
120
90
60
30
0
Cpk = 1.0
Stdev = 0.14
+3 Std
-3 Std
OIP3 (dBm)
Figure 3. OIP3
LSL = 35.5, Nominal = 38.1.
35
38
36
37
40
39
41
160
120
80
40
0
Cpk = 1.2
Stdev = 0.71
+3 Std
-3 Std
GAIN (dB)
Figure 4. Small Signal Gain
LSL = 18.5, Nominal = 20.2 dB, USL = 21.5.
18.5
19.5
20.5
21.5
300
250
200
150
100
50
0
Cpk = 2.0
Stdev = 0.21
+3 Std
-3 Std
Notes:
5. Distribution data sample size is 500 samples taken from 5 different wafers and 3 different lots.
Future wafers allocated to this product may have nominal values anywhere between the upper and
lower limits.
6. Measurements are made on production test board, which represents a trade-off between optimal
OIP3, NF and VSWR. Circuit losses have been de-embedded from actual measurements.
Figure 1. Typical I-V Curves
(Vgs = 0.1 per step).
VDS (V)
400
300
200
100
0
02
4
56
7
3
1
I DS
(mA)
0.9 V
0.8 V
0.7 V
0.5 V
0.6 V
P1dB (dBm)
Figure 5. P1dB
Nominal = 24.6.
24.2
24.8
24.4
24.6
25
25.2
240
200
160
120
80
40
0
Stdev = 0.12
+3 Std
-3 Std
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-531P8-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-531P8-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-531P8-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF54143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
| ATF-54143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
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