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參數(shù)資料
| 型號： | ATF-531P8-BLKG |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| 封裝： | 2 X 2 MM, 0.75 MM HEIGHT, PLASTIC, LPCC-8 |
| 文件頁數(shù)： | 4/16頁 |
| 文件大?。?/td> | 142K |
| 代理商： | ATF-531P8-BLKG |
12
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead.
ATF-531P8 Typical Scattering Parameters, VDS = 3V, IDS = 135 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.823
-57.1
33.96
49.888
151.3
-37.72
0.013
62.6
0.427
-55.1
35.84
0.2
0.826
-95.6
31.82
38.989
131.6
-33.98
0.020
45.7
0.418
-92.8
32.90
0.3
0.842
-118.2
29.66
30.415
119.6
-32.77
0.023
36.0
0.421
-115.9
31.21
0.4
0.846
-133.1
27.75
24.416
111.4
-32.04
0.025
30.1
0.420
-130.7
29.90
0.5
0.851
-142.0
26.21
20.452
105.9
-31.70
0.026
26.8
0.419
-139.0
28.96
0.6
0.850
-149.2
24.83
17.443
101.4
-31.37
0.027
24.4
0.419
-146.4
28.10
0.7
0.855
-154.9
23.62
15.178
97.7
-31.37
0.027
22.9
0.419
-151.9
27.50
0.8
0.856
-159.5
22.55
13.405
94.7
-31.06
0.028
22.1
0.420
-156.1
26.80
0.9
0.859
-163.2
21.59
12.012
92.0
-31.06
0.028
21.4
0.421
-159.7
26.32
1
0.857
-166.3
20.71
10.853
89.6
-30.75
0.029
21.1
0.419
-162.6
25.73
1.5
0.857
-177.7
17.32
7.342
79.9
-30.46
0.030
21.0
0.418
-172.9
23.89
1.9
0.858
175.8
15.31
5.828
73.6
-29.90
0.032
21.6
0.418
-178.2
22.60
2
0.855
174.4
15.08
5.676
72.3
-29.37
0.034
22.1
0.410
-179.1
22.23
2.4
0.855
168.8
13.51
4.738
66.4
-29.12
0.035
22.6
0.403
176.0
21.32
3
0.854
161.4
11.54
3.774
58.2
-28.40
0.038
22.8
0.409
169.8
19.97
4
0.858
150.7
8.98
2.812
45.3
-27.13
0.044
22.7
0.423
161.0
16.15
5
0.860
140.4
6.92
2.219
32.8
-26.02
0.050
20.7
0.440
152.8
13.82
6
0.868
131.4
5.21
1.821
21.0
-24.88
0.057
17.2
0.457
144.4
12.31
7
0.866
123.2
3.79
1.547
9.4
-23.88
0.064
13.4
0.475
136.6
10.81
8
0.877
114.8
2.52
1.337
-2.0
-22.85
0.072
8.5
0.490
128.0
10.00
9
0.876
106.3
1.57
1.198
-13.7
-21.83
0.081
2.6
0.502
119.3
9.09
10
0.880
95.1
0.56
1.066
-26.0
-21.11
0.088
-5.0
0.519
108.7
8.20
11
0.883
84.7
-0.46
0.948
-38.2
-20.35
0.096
-12.9
0.530
98.4
7.31
12
0.874
73.6
-1.51
0.840
-49.6
-19.83
0.102
-20.7
0.566
90.7
6.06
13
0.878
62.9
-2.56
0.745
-61.1
-19.41
0.107
-28.5
0.613
79.7
5.32
14
0.884
56.9
-3.54
0.665
-71.0
-18.94
0.113
-35.9
0.652
69.3
4.87
15
0.906
46.7
-4.70
0.582
-80.8
-18.71
0.116
-43.9
0.670
60.8
4.76
16
0.907
42.9
-5.61
0.524
-88.0
-18.49
0.119
-51.4
0.704
51.6
4.29
17
0.893
32.2
-6.80
0.457
-99.8
-18.42
0.120
-58.7
0.747
43.7
2.90
18
0.925
20.7
-8.38
0.381
-107.2
-18.86
0.114
-66.3
0.717
35.8
2.20
Freq
Fmin
Γopt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.25
0.20
166.00
0.020
28.47
0.9
0.30
0.25
169.00
0.022
24.36
1
0.30
0.35
171.00
0.018
24.24
1.5
0.36
0.40
173.00
0.019
21.17
2
0.45
0.46
176.80
0.020
19.30
2.4
0.52
-174.70
0.021
18.08
3
0.66
0.56
-169.80
0.025
16.26
3.5
0.70
0.62
-162.80
0.028
15.33
3.9
0.87
0.65
-157.90
0.042
14.62
5
1.02
0.67
-145.70
0.082
12.52
5.8
1.13
0.71
-136.80
0.140
11.53
6
1.24
0.73
-135.10
0.175
11.40
7
1.34
0.82
-126.20
0.380
10.57
8
1.58
0.83
-116.90
0.645
9.67
9
1.78
0.81
-107.50
0.870
8.59
10
1.88
0.83
-95.40
1.350
7.76
Typical Noise Parameters, VDS = 3V, IDS = 135 mA
Figure 32. MSG/MAG & |S21|
2 (dB)
@ 3V, 135 mA.
FREQUENCY (GHz)
40
30
20
10
0
-10
0
5
10
15
20
MSG/MAG
&
|S21|
2
(dB)
S21
MAG
MSG
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-531P8-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR2G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-531P8-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-531P8-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-531P8-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF54143 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143 | 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343 |
| ATF-54143-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
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