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參數(shù)資料
| 型號： | ATF-52189-BLK |
| 英文描述： | Enhancement Mode Pseudomorphic HEMT in SOT 89 Package |
| 中文描述： | 增強(qiáng)模式偽采用SOT 89 HEMT器件封裝 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 145K |
| 代理商： | ATF-52189-BLK |
Agilent ATF-53189 Enhancement
Mode
[1]
Pseudomorphic HEMT
in SOT 89 Package
Data Sheet
Features
Single voltage operation
High Linearity and Gain
Low Noise Figure
Excellent uniformity in product
specifications
SOT 89 standard package
Point MTTF > 300 years
[2]
MSL-1 and lead-free
Tape-and-Reel packaging option
available
Specifications
2 GHz, 4.0V, 135 mA (Typ.)
40.0 dBm Output IP3
23.0 dBm Output Power at 1dB gain
compression
0.85 dB Noise Figure
15.5 dB Gain
46% PAE at P1dB
LFOM
[3]
12.7 dB
Applications
Front-end LNA Q1 and Q2, Driver or
Pre-driver Amplifier for Cellular/
PCS and WCDMA wireless
infrastructure
Driver Amplifier for WLAN, WLL/
RLL and MMDS applications
General purpose discrete E-pHEMT
for other high linearity applications
Pin Connections and
Package Marking
Notes:
Package marking provides orientation and
identification:
“3G” = Device Code
“x” = Month code indicates the month of
manufacture.
D = Drain
S = Source
G = Gate
Notes:
1. Enhancement mode technology employs a
single positive V
gs
, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed
MTTF data.
3. Linearity Figure of Merit (LFOM) is OIP3
divided by DC bias power.
Description
Agilent Technologies’s
ATF-53189 is a single-voltage
high linearity, low noise
E-pHEMT FET packaged in a
low cost surface mount SOT89
package. The device is ideal as a
high-linearity, low noise,
medium-power amplifier. Its
operating frequency range is
from 50 MHz to 6 GHz.
ATF-53189 is ideally suited for
Cellular/PCS and WCDMA
wireless infrastructure, WLAN,
WLL and MMDS application, and
general purpose discrete
E-pHEMT amplifiers which
require medium power and high
linearity. All devices are 100% RF
and DC tested.
3GX
Bottom View
D
S
S
G
Top View
G
S
S
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-52189-TR1 | Enhancement Mode Pseudomorphic HEMT in SOT 89 Package |
| ATF-53189 | Enhancement Mode Pseudomorphic HEMT in SOT 89 Package |
| ATF-54143-TR1 | Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143-TR2 | Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF54143 | Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-52189-TR1 | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-52189-TR2 | 功能描述:射頻GaAs晶體管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-521P8 | 制造商:AVAGO 制造商全稱:AVAGO TECHNOLOGIES LIMITED 功能描述:High Linearity Enhancement Mode[1] Pseudomorphic 2x2 mm2 LPCC[3] Package |
| ATF-521P8-BLK | 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-521P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
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