參數(shù)資料
型號： ATF54143
英文描述： Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
中文描述： 低噪聲增強模式偽HEMT器件的表面貼裝塑料包裝
文件頁數(shù)： 1/16頁
文件大小： 154K
代理商： ATF54143
Agilent ATF-54143 Low Noise
Enhancement Mode
Pseudomorphic HEMT in a
Surface Mount Plastic Package
Data Sheet
Description
Agilent Technologies’s ATF-54143
is a high dynamic range, low
noise, E-PHEMT housed in a
4-lead SC-70 (SOT-343) surface
mount plastic package.
The combination of high gain,
high linearity and low noise
makes the ATF-54143 ideal for
cellular/PCS base stations,
MMDS, and other systems in the
450 MHz to 6 GHz frequency
range.
Features
High linearity performance
Enhancement Mode Technology
[1]
Low noise figure
Excellent uniformity in product
specifications
800 micron gate width
Low cost surface mount small
plastic package SOT-343 (4 lead
SC-70)
Tape-and-Reel packaging option
available
Specifications
2 GHz; 3V, 60 mA (Typ.)
36.2 dBm output 3
rd
order intercept
20.4 dBm output power at 1 dB
gain compression
0.5 dB noise figure
16.6 dB associated gain
Applications
Low noise amplifier for cellular/
PCS base stations
LNA for WLAN, WLL/RLL and
MMDS applications
General purpose discrete E-PHEMT
for other ultra low noise applications
Note:
1. Enhancement mode technology requires
positive Vgs, thereby eliminating the need for
the negative gate voltage associated with
conventional depletion mode devices.
Surface Mount Package
SOT-343
Pin Connections and
Package Marking
SOURCE
DRAIN
GATE
SOURCE
4
Note:
Top View. Package marking provides orientation
and identification
“4F” = Device Code
“x” = Date code character
identifies month of manufacture.
相關(guān)PDF資料
PDF描述
ATF-54143-BLK Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-55143 Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-55143-BLK Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-55143-TR1 Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-55143-TR2 Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-54143 制造商:Avago Technologies 功能描述:MOSFET RF HEMT SOT-343
ATF-54143-BLK 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-54143-BLKG 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
ATF-54143-TR1 功能描述:IC TRANS E-PHEMT 2GHZ SOT-343 RoHS:否 類別:分離式半導體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標準包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
ATF-54143-TR1G 功能描述:射頻GaAs晶體管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
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