參數(shù)資料
型號： ATF-501P8-TR2
廠商： AGILENT TECHNOLOGIES INC
元件分類： 小信號晶體管
英文描述： S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝： 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, LPCC-8
文件頁數(shù)： 10/22頁
文件大?。?/td> 184K
代理商： ATF-501P8-TR2
18
ATF-501P8 Typical Scattering Parameters,
VDS = 5.5V, IDS = 200 mA
Freq.
S11
S21
S12
S22
MSG/MAG K
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
factor
0.1
0.921
-130.1
31.8
38.725
113.1
-37.7
0.013
29.6
0.615
-156.5
34.7
0.145
0.2
0.914
-155.0
26.4
20.822
100.3
-37.1
0.014
22.8
0.659
-168.9
31.7
0.274
0.3
0.914
-164.6
23.0
14.136
94.7
-36.5
0.015
22.7
0.669
-174.1
29.7
0.385
0.4
0.913
-170.1
20.5
10.611
91.3
-36.5
0.015
24.9
0.673
-177.3
28.5
0.510
0.5
0.909
-172.9
18.9
8.824
88.4
-35.4
0.017
26.8
0.662
-178.9
27.2
0.576
0.6
0.909
-175.7
17.4
7.375
86.0
-35.4
0.017
29.4
0.662
179.6
26.4
0.672
0.7
0.909
-178.1
16.0
6.329
83.9
-34.9
0.018
31.3
0.665
178.2
25.5
0.739
0.8
0.908
-179.7
14.9
5.549
81.8
-34.4
0.019
32.9
0.667
176.5
24.7
0.798
0.9
0.911
178.5
13.8
4.922
80.0
-34.0
0.020
35.3
0.662
176.0
23.9
0.843
1
0.909
176.8
12.9
4.418
78.0
-33.6
0.021
36.4
0.664
174.8
23.2
0.897
1.5
0.905
170.8
9.3
2.933
69.4
-31.7
0.026
41.7
0.673
170.3
18.8
1.079
2
0.907
166.3
7.3
2.322
63.4
-30.5
0.030
44.3
0.674
166.6
16.5
1.153
2.5
0.903
165.3
6.8
2.182
62.1
-30.2
0.031
44.5
0.673
164.1
15.7
1.208
3
0.906
161.2
5.2
1.815
56.5
-28.9
0.036
45.1
0.671
160.4
14.2
1.226
4
0.903
155.0
3.2
1.447
47.8
-27.3
0.043
44.7
0.684
155.3
12.1
1.273
5
0.904
145.1
1.0
1.123
35.9
-24.9
0.057
42.3
0.678
148.7
9.9
1.257
6
0.899
135.2
-0.8
0.909
20.3
-23.0
0.071
35.1
0.681
147.2
8.2
1.235
7
0.904
126.2
-3.2
0.693
6.5
-22.4
0.076
27.4
0.647
136.0
6.2
1.332
8
0.901
115.6
-4.3
0.608
-4.0
-20.9
0.090
22.2
0.640
119.4
4.6
1.386
9
0.896
106.2
-5.4
0.536
-15.9
-19.7
0.104
12.6
0.634
117.5
3.1
1.459
10
0.891
95.4
-6.1
0.497
-23.9
-18.9
0.113
10.2
0.692
106.3
2.6
1.408
11
0.877
85.0
-7.0
0.446
-32.3
-17.7
0.131
1.0
0.739
92.9
1.5
1.403
12
0.871
74.4
-8.3
0.386
-42.5
-17.4
0.135
-5.8
0.730
89.7
-0.1
1.625
13
0.851
64.9
-8.2
0.387
-49.0
-15.9
0.160
-11.8
0.767
79.8
-0.3
1.480
14
0.850
56.2
-8.8
0.364
-60.0
-15.3
0.172
-21.0
0.803
70.5
-0.3
1.364
15
0.839
48.0
-9.5
0.335
-67.9
-14.5
0.188
-29.9
0.805
66.9
-1.3
1.403
16
0.834
39.7
-10.2
0.309
-72.5
-14.2
0.195
-36.8
0.768
52.7
-2.5
1.585
17
0.827
32.2
-10.2
0.309
-82.4
-13.3
0.216
-44.6
0.792
39.9
-2.5
1.472
18
0.814
24.4
-10.5
0.298
-89.4
-12.5
0.238
-51.8
0.790
30.2
-3.2
1.510
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
Figure 63. MSG/MAG & |S21|
2 vs. Frequency
at 5.5V 200mA.
FREQUENCY (GHz)
MSG/MAG
&
|S21|
2 (dB)
018
2
4
6
8
10
12
14
16
40
30
20
10
0
-10
-20
S21
MSG
MAG
相關(guān)PDF資料
PDF描述
ATF-501P8-BLK S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-501P8-TR2 L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-501P8-BLK L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-501P8-TR1 L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-511P8-BLKG C BAND, Si, N-CHANNEL, RF POWER, HEMFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-511P8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Single Voltage E-pHEMT Low Noise +41.7 dBm OIP3 in LPCC
ATF-511P8-BLK 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-511P8-BLK 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-511P8-TR1 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-511P8-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
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