參數(shù)資料
型號(hào): ATF-501P8-BLK
廠商: AGILENT TECHNOLOGIES INC
元件分類(lèi): 小信號(hào)晶體管
英文描述: S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封裝: 2 X 2 MM, 0.75 MM HEIGHT, LEAD FREE, LPCC-8
文件頁(yè)數(shù): 17/22頁(yè)
文件大?。?/td> 184K
代理商: ATF-501P8-BLK
4
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V
280 mA and 4.5V 400 mA quiesent bias respectively:
Figure 3. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in
gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.
Typical Gammas at Optimum OIP3 at 4.5V 280 mA
Optimized for maximum OIP3 at 4.5V 280 mA
Freq (GHz)
OIP3
Gain
P1dB
PAE
Gamma Source
Gamma Load
0.9
46.42
16.03
26.67
45.80
0.305 < -140
0.577 < 162
2.0
45.50
15.07
28.93
50.30
0.806 < -179.2
0.511 < 164
2.4
44.83
12.97
29.03
45.70
0.756 < -167
0.589 < -168
3.9
43.97
6.11
27.33
33.90
0.782 < -162
0.524 < -153
Typical Gammas at Optimum P1dB at 4.5V 280mA
Optimized for maximum P1dB at 4.5V 280 mA
Freq (GHz)
OIP3
Gain
P1dB
PAE
Gamma Source
Gamma Load
0.9
39.29
20.90
30.49
41.00
0.859 < 165
0.757 < 179
2.0
41.79
14.72
30.60
45.30
0.76 < -171
0.691 < -168
2.4
42.37
11.25
30.24
39.70
0.745 < -166
0.694 < -161
3.9
42.00
5.63
28.26
25.80
0.759 < -159
0.708 < -149
RF Input
2.2
F
Gate
Supply
Drain
Supply
15 Ohm
15 nH
1.8 nH
1.2 pF
50 Ohm
.02
50 Ohm
.02
110 Ohm
.03
110 Ohm
.03
1.2 pF
3.3 nH
RF Output
47 nH
2.2
F
DUT
Typical Gammas at Optimum OIP3 at 4.5V 400 mA
Optimized for maximum OIP3 at 4.5V 400 mA
Freq (GHz)
OIP3
Gain
P1dB
PAE
Gamma Source
Gamma Load
0.9
49.15
16.85
27.86
44.20
0.5852 < -135.80
0.4785 < 177.00
2.0
48.18
14.72
29.36
48.89
0.7267 < -175.37
0.7338 < 179.56
2.4
47.54
12.47
29.10
46.83
0.6155 < -171.71
0.5411 < -172.02
3.9
45.44
8.05
28.49
37.02
0.7888 < -148.43
0.5247 < -145.84
Typical Gammas at Optimum P1dB at 4.5V 400 mA
Optimized for maximum P1dB at 4.5V 400 mA
Freq (GHz)
OIP3
Gain
P1dB
PAE
Gamma Source
Gamma Load
0.9
41.78
21.84
31.23
49.97
0.7765 < 168.50
0.7589 < -175.09
2.0
43.28
14.83
31.03
44.78
0.8172 < -175.74
0.8011 < -165.75
2.4
42.46
11.90
30.66
41.00
0.8149 < -163.78
0.8042 < -161.79
3.9
42.94
7.70
29.56
33.06
0.8394 < -151.21
0.7826 < -149.00
相關(guān)PDF資料
PDF描述
ATF-501P8-TR2 L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-501P8-BLK L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-501P8-TR1 L BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-511P8-BLKG C BAND, Si, N-CHANNEL, RF POWER, HEMFET
ATF-511P8-TR2G C BAND, Si, N-CHANNEL, RF POWER, HEMFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ATF-501P8-BLK 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-501P8-TR1 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-501P8-TR2 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
ATF-511P8 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Single Voltage E-pHEMT Low Noise +41.7 dBm OIP3 in LPCC
ATF-511P8-BLK 功能描述:射頻GaAs晶體管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: