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參數(shù)資料
| 型號(hào)： | ATF-38143-TR1 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 540K |
| 代理商： | ATF-38143-TR1 |
5
PRELIMINARY DATA
This preliminary data is provided to assist you in the evaluation of product(s) currently under development and targeted for market release
shortly. Until Hewlett-Packard releases this product for general sales, HP reserves the right to alter prices, specifications, features,
capabilities, functions, release dates, and remove availability of the product(s) at any time.
ATF-38143 Typical Performance Curves
Figure 13. Fm in & Ga vs Freq & Temp @ 2V,
10mA
0
5
10
15
20
25
30
0.00
1.00
2.00
3.00
4.00
5.00
6.00
7.00
Frequency (GHz)
Ga(dB)
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
Ga(85C)
Ga(-40C)
Ga(25C)
Fmi n(85C)
Fmi n(25C)
Fmi n(-40C)
Fmin
Ga
+85C
+25C
-40C
+85
+25
-40C
Figure 12. Fm in vs Frequency and Current
@ 2V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
2
4
6
8
Frequency (GHz)
Fmin
(dB)
5mA
10mA
20mA
Figure 14 Associated Gain vs. Frequency
and Current @ 2V
0
5
10
15
20
25
30
0
2
4
6
8
10
12
Frequency (GHz)
Ga
(dB)
20mA
10mA
5mA
Figure 15 P1dB & OIP3 vs Freq & Temp @ 2V,
10mA
10
12
14
16
18
20
22
24
26
0
2000
4000
6000
8000
Frequency (MHz)
P1dB,
OIP3
(dBm)
-40 C
+25 C
+85 C
-40 C
+25 C
+85 C
Figure 16 NF, Gain, P1dB and OIP3 vs Ids
@2V, 3.9GHz
0
5
10
15
20
25
30
0
10
20
30
40
50
60
Current, Ids (mA)
Gain
(dB),
P1dB
and
OIP3
(dBm)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
NF
(dB)
Gain
P1dB
OIP3
NF
Figure 17 NF, Gain, P1dB and OIP3 vs Ids
@2V, 5.8GHz
0
5
10
15
20
25
30
0
10
20
30
40
50
60
Current, Ids (mA)
Gain
(dB),
P1dB
and
OIP3
(dBm)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
NF
(dB)
Gain
P1dB
OIP3
NF
Note:
1.
P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive
applied. As P1dB is approached, the drain current may increase or decrease depending on frequency and dc bias point.
At lower values of IDSQ the device is running closer to class B as power output approaches P1 dB. This results in
higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current
source as is typically done with active biasing.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-38143-TR2 | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-BLK | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR2G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-BLKG | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR1G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-38143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-38143-TR2 | 制造商:Avago Technologies 功能描述:TRANSISTOR,HEMT,N-CHAN,4.5V V(BR)DSS,90mA I(DSS),SOT-343R |
| ATF-38143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF4 | 功能描述:TERM BLOCK DIN RAIL 8MM GRAY RoHS:是 類別:連接器，互連式 >> 接線座 - Din 軌道，通道 系列:ATF 標(biāo)準(zhǔn)包裝:1 系列:CLIPLINE UK 類型:斷連 斷開類型:保險(xiǎn)絲，桿 位置數(shù):3 級(jí)別數(shù)目:1 端子 - 寬度:18.0mm 端接類型:螺釘 電流 - IEC:32A 電壓 - IEC:690V 電流 - UL:30A 電壓 - UL:600V 線規(guī)或范圍 - AWG:3-18 AWG 線規(guī)或范圍 - mm²:1.5-25mm² 特點(diǎn):- 顏色:黑 保險(xiǎn)絲類型:小型，10.3mm x 38mm 材料 - 絕緣體:聚酰胺（PA），尼龍 材料可燃性額定值:UL94 V-0 剝線長度:12mm 其它名稱:UK 10.3-HESI N 3POLUK10.3-HESIN3POL |
| ATF-44101 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-8 GHz Medium Power Gallium Arsenide FET |
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