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參數(shù)資料
| 型號： | ATF-38143-TR1 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 540K |
| 代理商： | ATF-38143-TR1 |
9
PRELIMINARY DATA
This preliminary data is provided to assist you in the evaluation of product(s) currently under development and targeted for market release
shortly. Until Hewlett-Packard releases this product for general sales, HP reserves the right to alter prices, specifications, features,
capabilities, functions, release dates, and remove availability of the product(s) at any time.
Noise Parameter Applications Information
Fmin values at 2GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The
Fmin values are based on a set of 16 noise figure measurements made at 16 different impedance using an ATN NP5 test
system. From these measurements, a true Fmin is calculated. Fmin represents the true minimum noise figure of the
device when the device is presented with an impedance matching network that transforms the source impedance,
typically 50
, to an impedance represented by the reflection coefficient Γ
o. The designer must design a matching
network that will present
Γ
o to the device with minimal associated circuit losses. The noise figure of the completed
amplifier is equal to the noise figure of the device plus the losses of the matching network preceding the device. The
noise figure of the device is equal to Fmin only when the device is presented with
Γ
o. If the reflection coefficient of the
matching network is other than
Γ
o , then the noise figure of the device will be greater than Fmin based on the following
equation.
NF = Fmin + 4 Rn
|
Γs - Γo |2
Zo
(|1 +
Γo|2) (1 - |Γs|2)
Where Rn/Zo is the normalized noise resistance,
Γ
o is the optimum reflection coefficient required to produce Fmin and Γ
s is the reflection coefficient of the source impedance actually presented to the device.
The losses of the matching networks are non-zero and they will also add to the noise figure of the device creating a
higher amplifier noise figure. The losses of the matching networks are related to the Q of the components and associated
printed circuit board loss.
Γo is typically fairly low at higher frequencies and increases as frequency is lowered. Larger
gate width devices will typically have a lower
Γ
o as compared to narrower gate width devices. Typically for FETs , the
higher
Γ
o usually infers that an impedance much higher than 50 is required for the device to produce Fmin. At VHF
frequencies and even lower L Band frequencies, the required impedance can be in the vicinity of several thousand ohms.
Matching to such a high impedance requires very hi-Q components in order to minimize circuit losses. As an example at
900 MHz, when air-wound coils (Q>100)are used for matching networks, the loss can still be up to 0.25 dB which will
add directly to the noise figure of the device. Using multi-layer molded inductors with Qs in the 30 to 50 range results in
additional loss over the air-wound coil. Losses as high as 0.5 dB or greater add to the typical 0.15 dB Fmin of the device
creating an amplifier noise figure of nearly 0.65 dB. A discussion concerning calculated and measured circuit losses and
their effect on amplifier noise figure is covered in Hewlett Packard Application 1085.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-38143-TR2 | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-BLK | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR2G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-BLKG | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR1G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-38143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-38143-TR2 | 制造商:Avago Technologies 功能描述:TRANSISTOR,HEMT,N-CHAN,4.5V V(BR)DSS,90mA I(DSS),SOT-343R |
| ATF-38143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF4 | 功能描述:TERM BLOCK DIN RAIL 8MM GRAY RoHS:是 類別:連接器，互連式 >> 接線座 - Din 軌道，通道 系列:ATF 標(biāo)準(zhǔn)包裝:1 系列:CLIPLINE UK 類型:斷連 斷開類型:保險絲，桿 位置數(shù):3 級別數(shù)目:1 端子 - 寬度:18.0mm 端接類型:螺釘 電流 - IEC:32A 電壓 - IEC:690V 電流 - UL:30A 電壓 - UL:600V 線規(guī)或范圍 - AWG:3-18 AWG 線規(guī)或范圍 - mm²:1.5-25mm² 特點:- 顏色:黑 保險絲類型:小型，10.3mm x 38mm 材料 - 絕緣體:聚酰胺（PA），尼龍 材料可燃性額定值:UL94 V-0 剝線長度:12mm 其它名稱:UK 10.3-HESI N 3POLUK10.3-HESIN3POL |
| ATF-44101 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:2-8 GHz Medium Power Gallium Arsenide FET |
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