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參數(shù)資料
| 型號： | ATF-38143-BLKG |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 7/13頁 |
| 文件大?。?/td> | 452K |
| 代理商： | ATF-38143-BLKG |
3
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit represents a trade-
off between an optimal noise match and a realizable match based on production test board requirements. Circuit losses have been de-embedded from
actual measurements.
Input
50 Ohm
Transmission Line
(0.5 dB loss)
50 Ohm
Transmission Line
(0.5 dB loss)
Input
Matching Circuit
Γmag = 0.380
Γang = 58.2°
(0.46 dB loss)
DUT
Output
Matching Circuit
Γmag = 0.336
Γang = 34.5°
(0.46 dB loss)
Output
ATF-38143 Electrical Specifications TA=25°C,RFparametersmeasuredinatestcircuitforatypicaldevice
Symbol
Parameters and Test Conditions
Units
Min. Typ.[2]
Max.
Idss[1]
SaturatedDrainCurrent
VDS=1.5V,VGS=0V
mA
90
118
145
VP[1]
PinchoffVoltage
VDS=1.5V,IDS=10%ofIdss
V
-0.65
-0.5
-0.35
Id
QuiescentBiasCurrent
VGS=-0.54V,VDS=2V
mA
—
10
—
gm[1]
Transconductance
VDS=1.5V,gm=Idss/VP
mmho 180
230
—
IGDO
GatetoDrainLeakageCurrent
VGD=-5V
A
500
Igss
GateLeakageCurrent
VGD=VGS=-4V
A
—
30
300
f=2GHz
VDS=2V,IDS=5mA
dB
0.6
VDS=2V,IDS=10mA
0.4
0.85
NF
NoiseFigure
VDS=2V,IDS=20mA
0.3
f=900MHz
VDS=2V,IDS=5mA
dB
0.6
VDS=2V,IDS=10mA
0.4
VDS=2V,IDS=20mA
0.3
f=2GHz
VDS=2V,IDS=5mA
dB
15.3
VDS=2V,IDS=10mA
15
16.0
18
Ga
AssociatedGain[3]
VDS=2V,IDS=20mA
17.0
f=900MHz
VDS=2V,IDS=5mA
dB
17.0
VDS=2V,IDS=10mA
19.0
VDS=2V,IDS=20mA
20.5
Output3rdOrder
f=2GHz VDS=2V,IDS=10mA
dBm 18.5
22.0
OIP3
InterceptPoint[3]
f=900MHz VDS=2V,IDS=10mA
dBm
22.0
Input3rdOrder
f=2GHz VDS=2V,IDS=10mA
dBm
6.0
IIP3
InterceptPoint[3]
f=900MHz VDS=2V,IDS=10mA
dBm
3.0
1dBCompressed
f=2GHz VDS=2V,IDS=10mA
dBm
12.0
P1dB
CompressedPower[3]
f=900MHz VDS=2V,IDS=10mA
dBm
12.0
Notes:
1. Guaranteedatwaferprobelevel.
2. Typicalvaluedeterminedfromasamplesizeof450partsfrom6wafers.
3. MeasurementsobtainedusingproductiontestboarddescribedinFigure5.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-38143-TR1G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-50189-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-50189-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-38143-BLKG | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
| ATF-38143-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-38143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| ATF-38143-TR2 | 制造商:Avago Technologies 功能描述:TRANSISTOR,HEMT,N-CHAN,4.5V V(BR)DSS,90mA I(DSS),SOT-343R |
| ATF-38143-TR2G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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