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參數(shù)資料
| 型號： | ATF-38143-BLK |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 132K |
| 代理商： | ATF-38143-BLK |
5
ATF-38143 Typical Performance Curves, continued
Notes:
1. P1dB measurements are performed with passive biasing. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device
is running closer to class B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency)
when compared to a device that is driven by a constant current source as is typically done with active biasing.
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and
Current at 2 V.
F
min
(dB)
08
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
4
26
FREQUENCY (GHz)
Figure 13. Fmin and Ga vs. Frequency
and Temperature at 2 V, 10 mA.
G
a
(dB)
0
30
25
20
15
10
5
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
7
2
1
45
6
3
–40 C
+25 C
+85 C
Ga
Fmin
FREQUENCY (GHz)
Figure 14. Associated Gain vs.
Frequency and Current at 2 V.
G
a
(dB)
012
30
25
20
15
10
5
0
4
28
10
6
5 mA
10 mA
20 mA
FREQUENCY (MHz)
Figure 15. P1dB and OIP3 vs. Frequency
and Temperature at 2 V, 10 mA.
P
1dB,
OIP3
(dBm)
0
8000
26
24
22
20
18
16
14
12
4000
2000
6000
10
–40 C
+25 C
+85 C
CURRENT, IDS (mA)
Figure 16. NF, Gain, P1dB and OIP3 vs.
IDS at 2 V, 3.9 GHz.
GAIN
(dB),
P
1dB
and
OIP3
(dBm)
060
30
25
20
15
10
5
0
20
10
40
50
30
NF
(dB)
P1dB
OIP3
Gain
NF
CURRENT, IDS (mA)
Figure 17. NF, Gain, P1dB and OIP3 vs.
IDS at 2 V, 5.8 GHz.
GAIN
(dB),
P
1dB
and
OIP3
(dBm)
060
30
25
20
15
10
5
0
20
10
40
50
30
NF
(dB)
P1dB
OIP3
Gain
NF
5 mA
10 mA
20 mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
相關PDF資料 |
PDF描述 |
|---|---|
| ATF-38143-TR2G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR1 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-BLK | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR2 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR1 | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-38143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-38143-BLKG | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
| ATF-38143-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-38143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-38143-TR2 | 制造商:Avago Technologies 功能描述:TRANSISTOR,HEMT,N-CHAN,4.5V V(BR)DSS,90mA I(DSS),SOT-343R |
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