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參數(shù)資料
| 型號： | ATF-38143-BLK |
| 廠商： | AGILENT TECHNOLOGIES INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封裝： | PLASTIC, SC-70, 4 PIN |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 132K |
| 代理商： | ATF-38143-BLK |
2
ATF-38143 Absolute Maximum Ratings[1]
Absolute
Symbol
Parameter
Units
Maximum
VDS
Drain - Source Voltage [2]
V
4.5
VGS
Gate - Source Voltage
V
-4
VGD
Gate Drain Voltage
V
-4
IDS
Drain Current
mA
Idss
Pdiss
Total Power Dissipation[2]
mW
580
Pin max
RF Input Power
dBm
17
TCH
Channel Temperature
°C
160
TSTG
Storage Temperature
°C
-65 to 160
θ
jc
Thermal Resistance[3]
°C/W
165
Notes:
1. Operation of this device above any one
of these parameters may cause
permanent damage.
2. Source lead temperature is 25
°C.
Derate 6 mW/
°C for T
L > 64
°C.
3. Thermal resistance measured using
150
°C Liquid Crystal Measurement
method.
Product Consistency Distribution Charts
OIP3 (dB)
Figure 2. OIP3 @ 2 GHz, 2 V, 10 mA.
LSL=18.5, Nominal=21.99, USL=26.0
18
26
Cpk = 1.59062
Stdev = 0.73 dBm
6 Wafers
Sample Size = 450
300
250
200
150
100
50
0
22
20
24
+3 Std
-3 Std
NF (dB)
Figure 3. NF @ 2 GHz, 2 V, 10 mA.
LSL=0, Nominal=0.44, USL=0.85
0.1
0.3
0.2
0.6
0.4
0.5
0.9
0.7 0.8
-3 Std
+3 Std
Cpk = 4.08938
Stdev = 0.03 dB
6 Wafers
Sample Size = 450
180
150
120
90
60
30
0
GAIN (dB)
Figure 4. Gain @ 2 GHz, 2 V, 10 mA.
LSL=15.0, Nominal=16.06, USL= 18.0
15
15.5
16
16.5
17
17.5
18
-3 Std
+3 Std
160
120
80
40
0
Cpk = 2.58097
Stdev = 0.14 dB
6 Wafers
Sample Size = 450
Note:
Distribution data sample size is 450
samples taken from 6 different wafers.
Future wafers allocated to this product
may have nominal values anywhere within
the upper and lower spec limits.
Measurements made on production test
board. This circuit represents a trade-off
between an optimal noise match and a
realizeable match based on production test
requirements. Circuit losses have been de-
embedded from actual measurements.
VDS (V)
Figure 1. Typical I-V Curves.
(VGS = -0.2 V per step)
I DS
(mA)
01
2
3
4
5
250
200
150
100
50
0
0 V
–0.6 V
+0.6 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ATF-38143-TR2G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR1 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-BLK | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR2 | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-38143-TR1 | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ATF-38143-BLKG | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-38143-BLKG | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
| ATF-38143-TR1 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-38143-TR1G | 功能描述:射頻GaAs晶體管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| ATF-38143-TR2 | 制造商:Avago Technologies 功能描述:TRANSISTOR,HEMT,N-CHAN,4.5V V(BR)DSS,90mA I(DSS),SOT-343R |
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