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參數(shù)資料
| 型號： | ATA6620-TASY |
| 廠商： | Atmel |
| 文件頁數(shù)： | 8/22頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC TXRX LIN BUS 5V/50MA 8SOIC |
| 標準包裝： | 112 |
| 類型： | 收發(fā)器 |
| 規(guī)程： | LIN |
| 電源電壓： | 5 V ~ 18 V |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SO |
| 包裝： | 管件 |
16
4850I–AUTO–09/09
ATA6620N
8
LIN Bus Driver: Bus Load Conditions:
Load 1 (Small): 1 nF, 1 k
Ω; Load 2 (Large): 10 nF, 500Ω; R
RXD = 5 kΩ; CRXD = 20 pF
10.5, 10.6 and 10.7 Specifies the Timing Parameters for Proper Operation at 20 Kbps
8.1
Driver recessive output
voltage
Load1/Load2
LIN
V
BUSrec
0.9
× V
S
V
S
VA
8.2
Driver dominant voltage
VVS = 7V
R
load = 500 Ω
LIN
V
_LoSUP
1.2
V
A
8.3
Driver dominant voltage
V
VS = 18V
R
load = 500 Ω
LIN
V_HiSUP
2V
A
8.4
Driver dominant voltage
V
VS = 7V
Rload = 1000 Ω
LIN
V
_LoSUP_1k
0.6
V
A
8.5
Driver dominant voltage
VVS = 18V
R
load = 1000 Ω
LIN
V
_HiSUP_1k
0.8
V
A
8.6
Pull–up resistor to VS
The serial diode is
mandatory
LIN
RLIN
20
30
60
k
Ω
A
8.7
Self-adapting current
limitation
V
BUS = VBatt_max
T
j = 125°C
Tj = 27°C
T
j = –40°C
LIN
IBUS_LIM
52
100
120
110
170
230
mA
A
8.8
Input leakage current at
the receiver including
pull–up resistor as
specified
Input Leakage current
Driver off
VBUS = 0V
V
Batt = 12V
LIN
I
BUS_PAS_dom
–1
mA
A
8.9
Leakage current LIN
recessive
Driver off
8V < VBatt < 18V
8V < VBUS < 18V
V
BUS ≥ VBatt
LIN
I
BUS_PAS_rec
15
20
A
8.10
Leakage current when
control unit
disconnected from
ground.
Loss of local ground
must not affect
communication in the
residual network
GNDDevice = VS
VBatt = 12V
0V < V
BUS < 18V
LIN
IBUS_NO_gnd
–10
+0.5
+10
A
8.11
Node has to sustain the
current that can flow
under this condition.
Bus must remain
operational under this
condition
VBatt disconnected
VSUP_Device = GND
0V < V
BUS < 18V
LIN
IBUS
0.5
3
A
9
LIN Bus Receiver
9.1
Center of receiver
threshold
V
BUS_CNT =
(Vth_dom + Vth_rec)/2
LIN
VBUS_CNT
0.475
×
VS
0.5
×
VS
0.525
×
VS
VA
9.2
Receiver dominant state VEN = 5V
LIN
VBUSdom
–27
0.4
× V
S
VA
9.3
Receiver recessive state VEN = 5V
LIN
VBUSrec
0.6
× V
S
40
V
A
9.4
Receiver input
hysteresis
V
hys = Vth_rec – Vth_dom
LIN
V
BUShys
0.028
×
V
S
0.1
× V
S
0.175
×
V
S
VA
8.
Electrical Characteristics (Continued)
5V < VS < 18V, Tamb = –40°C to 125°C
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
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