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參數(shù)資料
| 型號(hào)： | ATA6620-TASY |
| 廠商： | Atmel |
| 文件頁數(shù)： | 5/22頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC TXRX LIN BUS 5V/50MA 8SOIC |
| 標(biāo)準(zhǔn)包裝： | 112 |
| 類型： | 收發(fā)器 |
| 規(guī)程： | LIN |
| 電源電壓： | 5 V ~ 18 V |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SO |
| 包裝： | 管件 |
13
4850I–AUTO–09/09
ATA6620N
7.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameters
Symbol
Min.
Typ.
Max.
Unit
Supply voltage V
S
V
S
–0.3
+40
V
Pulse time
≤ 500 ms
T=25°C
Output current IVCC ≤ 50 mA
V
S
+40
V
Pulse time
≤ 2min
T=25°C
Output current I
VCC ≤ 50 mA
V
S
27
V
Logic pins (RXD, TXD, EN, NRES)
–0.3
+6.5
V
Output current NRES
I
NRES
–2
+2
mA
LIN
- DC voltage
- Transient voltage
–40
–150
+60
+100
V
CC
- DC voltage
–0.3
+6.5
V
ESD (DIN EN 6100–4–2)
Pin LIN, VS versus GND according to LIN
specification EMC Evaluation V 1.3
–6
+6
kV
HBM ESD S5.1 – all pins
–3
+3
kV
CDM ESD STM 5.3.1–1999
- All pins
–1000
+1000
V
Junction temperature
Tj
–40
+150
°C
Storage temperature
Ts
–55
+150
°C
Operating ambient temperature
Ta
–40
+125
°C
Thermal resistance junction to ambient
(free air)
R
thja
145
K/W
Special heat sink at GND (pin 3) on PCB
Rthja
80
K/W
Thermal shutdown of VCC regulator
TVCCoff
150
160
170
°C
Thermal shutdown of LIN output
TLINoff
150
160
170
°C
Thermal shutdown hysteresis
Thys
10
°C
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