參數(shù)資料
型號(hào): AT91SAM7S256C-MU
廠商: Atmel
文件頁數(shù): 45/165頁
文件大?。?/td> 0K
描述: IC ARM7 MCU 32BIT 256K 64QFN
標(biāo)準(zhǔn)包裝: 260
系列: SAM7S
核心處理器: ARM7
芯體尺寸: 16/32-位
速度: 55MHz
連通性: I²C,SPI,SSC,UART/USART,USB
外圍設(shè)備: 欠壓檢測(cè)/復(fù)位,DMA,POR,PWM,WDT
輸入/輸出數(shù): 32
程序存儲(chǔ)器容量: 256KB(256K x 8)
程序存儲(chǔ)器類型: 閃存
RAM 容量: 64K x 8
電壓 - 電源 (Vcc/Vdd): 1.65 V ~ 1.95 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 64-VFQFN 裸露焊盤
包裝: 托盤
139
SAM7S Series [DATASHEET]
6175M–ATARM–26-Oct-12
20.3.4.1
Flash Read Command
This command is used to read the Flash contents. The memory map is accessible through this command. Memory
is seen as an array of words (32-bit wide). The read command can start at any valid address in the memory plane.
This address must be word-aligned. The address is automatically incremented.
20.3.4.2
Flash Write Command
This command is used to write the Flash contents. The address transmitted must be a valid Flash address in the
memory plane.
The Flash memory plane is organized into several pages. Data to be written is stored in a load buffer that corre-
sponds to a Flash memory page. The load buffer is automatically flushed to the Flash:
before access to any page than the current one
at the end of the number of words transmitted
The Write Page command (WP) is optimized for consecutive writes. Write handshaking can be chained; an inter-
nal address buffer is automatically increased.
Flash Write Page and Lock command (WPL) is equivalent to the Flash Write Command. However, the lock bit is
automatically set at the end of the Flash write operation. As a lock region is composed of several pages, the pro-
grammer writes to the first pages of the lock region using Flash write commands and writes to the last page of the
lock region using a Flash write and lock command.
Flash Erase Page and Write command (EWP) is equivalent to the Flash Write Command. However, before pro-
gramming the load buffer, the page is erased.
Flash Erase Page and Write the Lock command (EWPL) combines EWP and WPL commands.
20.3.4.3
Flash Full Erase Command
This command is used to erase the Flash memory planes.
Table 20-22. Read Command
Read/Write
DR Data
Write
(Number of Words to Read) << 16 | READ
Write
Address
Read
Memory [address]
Read
Memory [address+4]
...
Read
Memory [address+(Number of Words to Read - 1)* 4]
Table 20-23. Write Command
Read/Write
DR Data
Write
(Number of Words to Write) << 16 | (WP or WPL or EWP or EWPL)
Write
Address
Write
Memory [address]
Write
Memory [address+4]
Write
Memory [address+8]
Write
Memory [address+(Number of Words to Write - 1)* 4]
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