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參數(shù)資料
| 型號： | AT45DB011D_07 |
| 廠商： | Atmel Corp. |
| 英文描述： | 1-megabit 2.7-volt DataFlash |
| 中文描述： | 1兆位2.7伏的DataFlash |
| 文件頁數(shù)： | 15/52頁 |
| 文件大?。?/td> | 1107K |
| 代理商： | AT45DB011D_07 |
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15
3639B–DFLASH–02/07
AT45DB011D [Preliminary]
9.1.1
Erase Sector Protection Register Command
In order to modify and change the values of the Sector Protection Register, it must first be
erased using the Erase Sector Protection Register command.
To erase the Sector Protection Register, the CS pin must first be asserted as it would be with
any other command. Once the CS pin has been asserted, the appropriate 4-byte opcode
sequence must be clocked into the device via the SI pin. The 4-byte opcode sequence must
start with 3DH and be followed by 2AH, 7FH, and CFH. After the last bit of the opcode sequence
has been clocked in, the CS pin must be deasserted to initiate the internally self-timed erase
cycle. The erasing of the Sector Protection Register should take place in a time of t
PE
, during
which time the Status Register will indicate that the device is busy. If the device is powered-
down before the completion of the erase cycle, then the contents of the Sector Protection Regis-
ter cannot be guaranteed.
The Sector Protection Register can be erased with the sector protection enabled or disabled.
Since the erased state (FFH) of each byte in the Sector Protection Register is used to indicate
that a sector is specified for protection, leaving the sector protection enabled during the erasing
of the register allows the protection scheme to be more effective in the prevention of accidental
programming or erasing of the device. If for some reason an erroneous program or erase com-
mand is sent to the device immediately after erasing the Sector Protection Register and before
the register can be reprogrammed, then the erroneous program or erase command will not be
processed because all sectors would be protected.
Figure 9-2.
Erase Sector Protection Register
Command
Byte 1
Byte 2
Byte 3
Byte 4
Erase Sector Protection Register
3DH
2AH
7FH
CFH
Opcode
Byte 1
Opcode
Byte 2
Opcode
Byte 3
Opcode
Byte 4
CS
Each transition
represents
8
b
its
SI
相關PDF資料 |
PDF描述 |
|---|---|
| AT45DB011D-MU | 1-megabit 2.7-volt DataFlash |
| AT45DB011D-SSU | 1-megabit 2.7-volt DataFlash |
| AT45DB011D-SU | 1-megabit 2.7-volt DataFlash |
| AT45DB011 | 1-megabit 2.7-volt Only Serial DataFlash(1M位 2.7V串行數(shù)據閃速存儲器) |
| AT45DB021B-CU | 2-megabit 2.7-volt Only DataFlash |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AT45DB011D-DWF | 制造商:Adesto Technologies Corporation 功能描述:1M DATAFLASH, 8-UDFN,IND,GRN,NIPDAU - 1MB, DATAFLASH, WAFER, - Gel-pak, waffle pack, wafer, diced wafer on film 制造商:Adesto Technologies Corporation 功能描述:DIE/WAFER FLASH 1MBIT 66MHZ |
| AT45DB011D-MH SL954 | 制造商:Adesto Technologies Corporation 功能描述:IC FLASH 1MBIT 66MHZ 8UDFN |
| AT45DB011D-MH-SL954 | 制造商:Adesto Technologies Corporation 功能描述:8-UDFN (5X6), IND TEMP, 2.7V, TRAY, 256 BYTE PAGE - Trays 制造商:Adesto Technologies Corporation 功能描述:Flash 1M, 66MHz, 2.7-3.6V DataFlash |
| AT45DB011D-MH-SL955 | 制造商:Adesto Technologies Corporation 功能描述:8-UDFN (5X6), IND TEMP, 2.7V, T&R, 256 BYTE PAGE - Tape and Reel 制造商:Adesto Technologies Corporation 功能描述:IC FLASH 1MBIT 66MHZ 8UDFN 制造商:Adesto Technologies Corporation 功能描述:Flash 1M, 66MHz 2.7-3.6V DataFlash |
| AT45DB011D-MH-T | 功能描述:閃存 1M 2.7-3.6V, 66Mhz Serial 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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