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參數(shù)資料
| 型號(hào)： | AT28LV010-20TC |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| 中文描述： | 128K X 8 EEPROM 3V, 200 ns, PDSO32 |
| 封裝： | 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 498K |
| 代理商： | AT28LV010-20TC |
Block Diagram
Temperature Under Bias.................-55°C to +125°C
Storage Temperature......................-65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ................... -0.6V to +6.25V
All Output Voltages
with Respect to Ground .............-0.6V to V
CC
+ 0.6V
Voltage on OE and A9
with Respect to Ground ................... -0.6V to +13.5V
*NOTICE: Stresses beyond those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at these or any other conditions beyond those indi-
cated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
Absolute Maximum Ratings*
The AT28LV010 is accessed like a Static RAM for the
read or write cycle without the need for external compo-
nents. The device contains a 128-byte page register to al-
low writing of up to 128-bytes simultaneously. During a
write cycle, the address and 1 to 128-bytes of data are
internally latched, freeing the address and data bus for
other operations. Following the initiation of a write cycle,
the device will automatically write the latched data using
an internal control timer. The end of a write cycle can be
detected by DATA polling of I/O7. Once the end of a write
cycle has been detected a new access for a read or write
can begin.
Atmel’s 28LV010 has additional features to ensure high
quality and manufacturability. The device utilizes internal
error correction for extended endurance and improved
data retention characteristics. Software data protection is
implemented to guard against inadvertent writes. The de-
vice also includes an extra 128-bytes of E
2
PROM for de-
vice identification or tracking.
Description
(Continued)
2-156
AT28LV010
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT28LV010-20TI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28LV010-25 | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28LV010-25JC | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28LV010-25JI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28LV010-25PC | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT28LV010-20TI | 功能描述:電可擦除可編程只讀存儲(chǔ)器 1M 3V SDP- 200NS IND TEMP RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28LV010-20TU | 功能描述:電可擦除可編程只讀存儲(chǔ)器 1M 3V SDP - 200NS IND TEMP RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28LV010-20TU SL319 | 制造商:Atmel Corporation 功能描述:PARALLEL EEPROM, 1M (128K X 8), 3V, SDP - 200NS, TSOP, IND T - Trays |
| AT28LV010-20TU SL383 | 制造商:Atmel Corporation 功能描述:EEPROM PARALLEL 1MBIT 128KX8 3.3V 32TSOP-I - Tape and Reel |
| AT28LV010-20TU-235 | 功能描述:IC EEPROM 1MBIT 200NS 32TSOP 制造商:microchip technology 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:EEPROM 技術(shù):EEPROM 存儲(chǔ)容量:1Mb （128K x 8） 寫周期時(shí)間 - 字，頁:10ms 訪問時(shí)間:200ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TC） 安裝類型:表面貼裝 封裝/外殼:32-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:32-TSOP 標(biāo)準(zhǔn)包裝:1 |
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