參數(shù)資料
型號: AT28HC256E-12TC
廠商: ATMEL CORP
元件分類: DRAM
英文描述: 256 32K x 8 High Speed Parallel EEPROMs
中文描述: 32K X 8 EEPROM 5V, 120 ns, PDSO28
封裝: PLASTIC, MO-183, TSOP1-28
文件頁數(shù): 8/16頁
文件大?。?/td> 445K
代理商: AT28HC256E-12TC
AT28HC256
8
Software Data Protection
Enable Algorithm
(1)
Notes for software program code:
1.
Data Format: I/O7 - I/O0 (Hex);
Address Format: A14 - A0 (Hex).
2.
Write Protect state will be activated at end of
write even if no other data is loaded.
3.
Write Protect state will be deactivated at end of
write period even if no other data is loaded.
4.
1 to 64 bytes of data are loaded.
Software Data Protection
Disable Algorithm
(1)
Software Protected Write Cycle Waveforms
(1)(2)
Notes:
1. A6 through A14 must specify the same page address during each high to low transition of WE (or CE) after the software
code has been entered.
2. OE must be high only when WE and CE are both low.
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA A0
TO
ADDRESS 5555
LOAD DATA XX
TO
ANY ADDRESS
(4)
LOAD LAST BYTE
TO
LAST ADDRESS
ENTER DATA
PROTECT STATE
WRITES ENABLED
(2)
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 55
TO
ADDRESS 2AAA
LOAD DATA 80
TO
ADDRESS 5555
LOAD DATA AA
TO
ADDRESS 5555
LOAD DATA 20
TO
ADDRESS 5555
LOAD DATA XX
TO
ANY ADDRESS
(4)
LOAD LAST BYTE
TO
LAST ADDRESS
LOAD DATA 55
TO
ADDRESS 2AAA
EXIT DATA
PROTECT STATE
(3)
相關PDF資料
PDF描述
AT28HC256E-12TI 256 32K x 8 High Speed Parallel EEPROMs
AT28HC256-90 64K 8K x 8 Battery-Voltage CMOS E2PROM
AT28HC256 High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-TSSOP -55 to 125
AT28HC256-12 High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-TSSOP -55 to 125
AT28HC256-12JC 256 32K x 8 High Speed Parallel EEPROMs
相關代理商/技術參數(shù)
參數(shù)描述
AT28HC256E-12TI 功能描述:電可擦除可編程只讀存儲器 256K HI-ENDURANCE SDP-120NS IND TEMP RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8
AT28HC256E-12TU 功能描述:電可擦除可編程只讀存儲器 Parallel 電可擦除可編程只讀存儲器 5V-120NS, 883c, GR RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8
AT28HC256E-12TU-T 功能描述:120NS, TSOP, IND TEMP, GREEN 制造商:microchip technology 系列:- 包裝:剪切帶(CT) 零件狀態(tài):在售 存儲器類型:非易失 存儲器格式:EEPROM 技術:EEPROM 存儲容量:256Kb (32K x 8) 寫周期時間 - 字,頁:10ms 訪問時間:120ns 存儲器接口:并聯(lián) 電壓 - 電源:4.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C(TC) 安裝類型:表面貼裝 封裝/外殼:28-TSSOP(0.465",11.80mm 寬) 供應商器件封裝:28-TSSOP 標準包裝:1
AT28HC256E-12UM/883 功能描述:電可擦除可編程只讀存儲器 256K HI-ENDURANCE SDP - 120NS RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8
AT28HC256E-70DM/883 功能描述:電可擦除可編程只讀存儲器 256K HI-ENDURANCE SDP - 70NS RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8