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參數(shù)資料
| 型號(hào)： | AT28HC256E-12SJ |
| 廠商： | ATMEL CORP |
| 元件分類： | PROM |
| 英文描述： | 32K X 8 EEPROM 5V, 120 ns, PDSO28 |
| 封裝： | 0.300 INCH, PLASTIC, MS-013, SOIC-28 |
| 文件頁數(shù)： | 1/25頁 |
| 文件大小： | 607K |
| 代理商： | AT28HC256E-12SJ |
Features
Fast Read Access Time – 70 ns
Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
Fast Write Cycle Times
– Page Write Cycle Time: 3 ms or 10 ms Maximum
– 1 to 64-byte Page Write Operation
Low Power Dissipation
– 80 mA Active Current
– 3 mA Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
– Endurance: 104 or 105 Cycles
– Data Retention: 10 Years
Single 5V
± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Full Military and Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option
1.
Description
The AT28HC256 is a high-performance electrically erasable and programmable read-
only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-
tured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256 offers
access times to 70 ns with power dissipation of just 440 mW. When the AT28HC256
is deselected, the standby current is less than 5 mA.
The AT28HC256 is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
writing of up to 64 bytes simultaneously. During a write cycle, the address and 1 to 64
bytes of data are internally latched, freeing the addresses and data bus for other oper-
ations. Following the initiation of a write cycle, the device will automatically write the
latched data using an internal control timer. The end of a write cycle can be detected
by DATA Polling of I/O7. Once the end of a write cycle has been detected a new
access for a read or write can begin.
Atmel’s 28HC256 has additional features to ensure high quality and manufacturability.
The device utilizes internal error correction for extended endurance and improved
data retention characteristics. An optional software data protection mechanism is
available to guard against inadvertent writes. The device also includes an extra
64 bytes of EEPROM for device identification or tracking.
256 (32K x 8)
High-speed
Parallel
EEPROM
AT28HC256
0007L–PEEPR–03/08
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT28HC256E-12SU | 功能描述:電可擦除可編程只讀存儲(chǔ)器 Parallel 電可擦除可編程只讀存儲(chǔ)器 5V-120NS, 883c, GR RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28HC256E-12SU SL202 | 制造商:Atmel Corporation 功能描述:PARALLEL EEPROM, 256K (32K X 8 |
| AT28HC256E-12SU-202 | 功能描述:IC EEPROM 256KBIT 120NS 28SOIC 制造商:microchip technology 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:EEPROM 技術(shù):EEPROM 存儲(chǔ)容量:256Kb （32K x 8） 寫周期時(shí)間 - 字，頁:10ms 訪問時(shí)間:120ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:4.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C（TC） 安裝類型:表面貼裝 封裝/外殼:28-SOIC（0.295"，7.50mm 寬） 供應(yīng)商器件封裝:28-SOIC 標(biāo)準(zhǔn)包裝:1 |
| AT28HC256E-12SU-T | 功能描述:120NS, SOIC, IND TEMP, GREEN 制造商:microchip technology 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:EEPROM 技術(shù):EEPROM 存儲(chǔ)容量:256Kb （32K x 8） 寫周期時(shí)間 - 字，頁:10ms 訪問時(shí)間:120ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:4.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C（TC） 安裝類型:表面貼裝 封裝/外殼:28-SOIC（0.295"，7.50mm 寬） 供應(yīng)商器件封裝:28-SOIC 標(biāo)準(zhǔn)包裝:1 |
| AT28HC256E-12TC | 功能描述:電可擦除可編程只讀存儲(chǔ)器 256K HI-ENDURANCE SDP-120NS COM TEMP RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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