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參數(shù)資料
| 型號： | AT28HC256E-12SI |
| 廠商： | ATMEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 256 32K x 8 High Speed Parallel EEPROMs |
| 中文描述： | 32K X 8 EEPROM 5V, 120 ns, PDSO28 |
| 封裝： | 0.300 INCH, PLASTIC, MS-013, SOIC-28 |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 445K |
| 代理商： | AT28HC256E-12SI |
AT28HC256
2
offers access times to 70 ns with power dissipation of just
440 mW. When the AT28HC256 is deselected, the standby
current is less than 5 mA.
The AT28HC256 is accessed like a Static RAM for the read
or write cycle without the need for external components.
The device contains a 64-byte page register to allow writing
of up to 64 bytes simultaneously. During a write cycle, the
address and 1 to 64 bytes of data are internally latched,
freeing the addresses and data bus for other operations.
Following the initiation of a write cycle, the device will auto-
matically write the latched data using an internal control
timer. The end of a write cycle can be detected by DATA
polling of I/O
7
. Once the end of a write cycle has been
detected a new access for a read or write can begin.
Atmel’s 28HC256 has additional features to ensure high
quality and manufacturability. The device utilizes internal
error correction for extended endurance and improved data
retention characteristics. An optional software data protec-
tion mechanism is available to guard against inadvertent
writes. The device also includes an extra 64 bytes of
EEPROM for device identification or tracking.
Block Diagram
Absolute Maximum Ratings*
Temperature Under Bias................................ -55°C to +125°C
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
Storage Temperature..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground.............................-0.6V to V
CC
+ 0.6V
Voltage on OE and A9
with Respect to Ground...................................-0.6V to +13.5V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AT28HC256E-12TC | 256 32K x 8 High Speed Parallel EEPROMs |
| AT28HC256E-12TI | 256 32K x 8 High Speed Parallel EEPROMs |
| AT28HC256-90 | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| AT28HC256 | High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-TSSOP -55 to 125 |
| AT28HC256-12 | High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-TSSOP -55 to 125 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT28HC256E-12SI SL383 | 制造商:Atmel Corporation 功能描述:EEPROM Parallel 256K-Bit 32K x 8 5V 28-Pin SOIC |
| AT28HC256E-12SU | 功能描述:電可擦除可編程只讀存儲器 Parallel 電可擦除可編程只讀存儲器 5V-120NS, 883c, GR RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT28HC256E-12SU SL202 | 制造商:Atmel Corporation 功能描述:PARALLEL EEPROM, 256K (32K X 8 |
| AT28HC256E-12SU-202 | 功能描述:IC EEPROM 256KBIT 120NS 28SOIC 制造商:microchip technology 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 存儲器類型:非易失 存儲器格式:EEPROM 技術(shù):EEPROM 存儲容量:256Kb （32K x 8） 寫周期時間 - 字，頁:10ms 訪問時間:120ns 存儲器接口:并聯(lián) 電壓 - 電源:4.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C（TC） 安裝類型:表面貼裝 封裝/外殼:28-SOIC（0.295"，7.50mm 寬） 供應(yīng)商器件封裝:28-SOIC 標(biāo)準(zhǔn)包裝:1 |
| AT28HC256E-12SU-T | 功能描述:120NS, SOIC, IND TEMP, GREEN 制造商:microchip technology 系列:- 包裝:剪切帶（CT） 零件狀態(tài):在售 存儲器類型:非易失 存儲器格式:EEPROM 技術(shù):EEPROM 存儲容量:256Kb （32K x 8） 寫周期時間 - 字，頁:10ms 訪問時間:120ns 存儲器接口:并聯(lián) 電壓 - 電源:4.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C（TC） 安裝類型:表面貼裝 封裝/外殼:28-SOIC（0.295"，7.50mm 寬） 供應(yīng)商器件封裝:28-SOIC 標(biāo)準(zhǔn)包裝:1 |
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