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參數(shù)資料
| 型號： | AT24C128B |
| 廠商： | Atmel Corp. |
| 英文描述： | Two-wire Serial EEPROM |
| 中文描述： | 兩線串行EEPROM |
| 文件頁數(shù)： | 9/20頁 |
| 文件大?。?/td> | 679K |
| 代理商： | AT24C128B |
9
AT24C128B [Preliminary]
5208A–SEEPR–1/07
Write
Operations
BYTE WRITE:
A write operation requires two 8-bit data word addresses following the device
address word and acknowledgment. Upon receipt of this address, the EEPROM will again
respond with a “0” and then clock in the first 8-bit data word. Following receipt of the 8-bit data
word, the EEPROM will output a “0”. The addressing device, such as a microcontroller, must
then terminate the write sequence with a stop condition. At this time the EEPROM enters an
internally-timed write cycle, t
WR
, to the nonvolatile memory. All inputs are disabled during this
write cycle and the EEPROM will not respond until the write is complete (see Figure 8).
Figure 8.
Byte Write
Note:
*
= DON’T CARE bit
PAGE WRITE:
The 256K EEPROM is capable of 64-byte page writes.
A page write is initiated the same way as a byte write, but the microcontroller does not send a
stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges
receipt of the first data word, the microcontroller can transmit up to 63 more data words. The
EEPROM will respond with a “0” after each data word received. The microcontroller must ter-
minate the page write sequence with a stop condition (see Figure 9).
Figure 9.
Page Write
Note:
*
= DON’T CARE bit
The data word address lower six bits are internally incremented following the receipt of each
data word. The higher data word address bits are not incremented, retaining the memory page
row location. When the word address, internally generated, reaches the page boundary, the
following byte is placed at the beginning of the same page. If more than 64 data words are
transmitted to the EEPROM, the data word address will “roll over” and previous data will be
overwritten. The address “roll over” during write is from the last byte of the current page to the
first byte of the same page.
ACKNOWLEDGE POLLING:
Once the internally-timed write cycle has started and the
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a
start condition followed by the device address word. The read/write bit is representative of the
operation desired. Only if the internal write cycle has completed will the EEPROM respond
with a “0”, allowing the read or write sequence to continue.
相關PDF資料 |
PDF描述 |
|---|---|
| AT24C128 | 128K 2-wire Serial EEPROMs(128K 2線串行EEPROM) |
| AT24C164-10PU-1.8 | Two-Wire Serial EEPROM 16K (2048 x 8) |
| AT24C164-10PU-2.7 | Two-Wire Serial EEPROM 16K (2048 x 8) |
| AT24C164-10SU-1.8 | Two-Wire Serial EEPROM 16K (2048 x 8) |
| AT24C164-10SU-2.7 | Two-Wire Serial EEPROM 16K (2048 x 8) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AT24C128B_08 | 制造商:ATMEL 制造商全稱:ATMEL Corporation 功能描述:Two-wire Serial EEPROM |
| AT24C128BD3-DH-T | 功能描述:電可擦除可編程只讀存儲器 Serial 電可擦除可編程只讀存儲器 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT24C128BN-SH-B | 功能描述:電可擦除可編程只讀存儲器 IND TEMP 1.8V - 128Kbit 2-Wire Bus RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT24C128BN-SH-T | 功能描述:電可擦除可編程只讀存儲器 IND TEMP 1.8V - 128Kbit 2-Wire Bus RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT24C128B-PU | 功能描述:電可擦除可編程只讀存儲器 IND TEMP 1.8V - 128Kbit 2-Wire Bus RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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