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參數(shù)資料
9
AT24C1024
1471N–SEEPR–12/05
Write
Operations
BYTE WRITE:
To select a data word in the 1024K memory requires a 17-bit word address.
The word address field consists of the P
0
bit of the device address, then the most significant
word address followed by the least significant word address (see Figure 8 on page 11)
A write operation requires the P
0
bit and two 8-bit data word addresses following the device
address word and acknowledgment. Upon receipt of this address, the EEPROM will again
respond with a zero and then clock in the first 8-bit data word. Following receipt of the 8-bit
data word, the EEPROM will output a zero. The addressing device, such as a microcontroller,
then must terminate the write sequence with a stop condition. At this time the EEPROM enters
an internally timed write cycle, T
WR
, to the nonvolatile memory. All inputs are disabled during
this write cycle and the EEPROM will not respond until the write is complete (see Figure 8 on
page 11).
PAGE WRITE:
The 1024K EEPROM is capable of 256-byte page writes.
A page write is initiated the same way as a byte write, but the microcontroller does not send a
stop condition after the first data word is clocked in. Instead, after the EEPROM acknowledges
receipt of the first data word, the microcontroller can transmit up to 255 more data words. The
EEPROM will respond with a zero after each data word received. The microcontroller must ter-
minate the page write sequence with a stop condition (see Figure 9 on page 11).
The data word address lower 8 bits are internally incremented following the receipt of each
data word. The higher data word address bits are not incremented, retaining the memory page
row location. When the word address, internally generated, reaches the page boundary, the
following byte is placed at the beginning of the same page. If more than 256 data words are
transmitted to the EEPROM, the data word address will “roll over” and previous data will be
overwritten. The address “rollover” during write is from the last byte of the current page to the
first byte of the same page.
ACKNOWLEDGE POLLING:
Once the internally timed write cycle has started and the
EEPROM inputs are disabled, acknowledge polling can be initiated. This involves sending a
start condition followed by the device address word. The read/write bit is representative of the
operation desired. Only if the internal write cycle has completed will the EEPROM respond
with a zero, allowing the read or write sequence to continue.
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| AT24C1024B | Two-wire Serial EEPROM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AT24C1024W-10SI-2.7 | 功能描述:IC EEPROM 1MBIT 1MHZ 8SOIC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:378 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-CBGA 供應(yīng)商設(shè)備封裝:48-CBGA（7x7） 包裝:托盤 |
| AT24C1024W-10SI-2.7 SL383 | 功能描述:IC EEPROM 1MBIT 1MHZ 8SOIC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 |
| AT24C1024W-10SI-2.7-T | 功能描述:IC EEPROM 1MBIT 1MHZ 8SOIC 制造商:microchip technology 系列:- 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) 存儲器類型:非易失 存儲器格式:EEPROM 技術(shù):EEPROM 存儲容量:1Mb （128K x 8） 時鐘頻率:1MHz 寫周期時間 - 字，頁:10ms 訪問時間:550ns 存儲器接口:I2C 電壓 - 電源:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:8-SOIC（0.209"，5.30mm 寬） 供應(yīng)商器件封裝:8-SOIC 基本零件編號:AT24C1024 標(biāo)準(zhǔn)包裝:3,000 |
| AT24C1024W-10SU-2.7 | 功能描述:電可擦除可編程只讀存儲器 Serial 電可擦除可編程只讀存儲器 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| AT24C1024W10SU2.7 SL383 | 制造商:Atmel Corporation 功能描述:EEPROM Serial-2Wire 1M-bit 128K x 8 3.3V/5V 8-Pin SOIC EIAJ T/R |
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