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參數資料
| 型號： | AT-41400-GP4G |
| 元件分類： | 小信號晶體管 |
| 英文描述： | C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | DIE-2 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 55K |
| 代理商： | AT-41400-GP4G |
4-99
Up to 6 GHz Low Noise Silicon
Bipolar Transistor Chip
Technical Data
Features
Low Noise Figure:
1.6 dB Typical at 2.0 GHz
3.0 dB Typical at 4.0 GHz
High Associated Gain:
14.5 dB Typical at 2.0 GHz
10.5 dB Typical at 4.0 GHz
High Gain-Bandwidth
Product:
9.0 GHz Typical fT
AT-41400
Chip Outline
Description
Hewlett-Packard’s AT-41400 is a
general purpose NPN bipolar
transistor chip that offers excel-
lent high frequency performance.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
The 14 emitter finger interdigitated
geometry yields an intermediate
sized transistor with impedances
that are easy to match for low
noise and moderate power appli-
cations. This device is designed for
use in low noise, wideband
amplifier, mixer and oscillator
applications in the VHF, UHF, and
microwave frequencies. An
optimum noise match near 50
at
1 GHz , makes this device easy to
use as a low noise amplifier.
The AT-41400 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ion-
implantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
5965-8922E
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