參數(shù)資料
          型號(hào): AT-41410
          廠商: AGILENT TECHNOLOGIES INC
          元件分類: 小信號(hào)晶體管
          英文描述: C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
          封裝: HERMETIC SEALED, METAL CERAMIC, MICROSTRIP PACKAGE-4
          文件頁數(shù): 1/5頁
          文件大小: 53K
          代理商: AT-41410
          4-104
          Up to 6 GHz Low Noise
          Silicon Bipolar Transistor
          Technical Data
          Features
          Low Noise Figure:
          1.6 dB Typical at 2.0 GHz
          3.0 dB Typical at 4.0 GHz
          High Associated Gain:
          14.0 dB Typical at 2.0 GHz
          10.0 dB Typical at 4.0 GHz
          High Gain-Bandwidth
          Product: 8.0 GHz Typical fT
          Hermetic, Gold-ceramic
          Microstrip Package
          AT-41410
          100 mil Package
          Description
          Hewlett-Packard’s AT-41410 is a
          general purpose NPN bipolar
          transistor that offers excellent
          high frequency performance. The
          AT-41410 is housed in a hermetic,
          high reliability 100 mil ceramic
          package. The 4 micron emitter-to-
          emitter pitch enables this transis-
          tor to be used in many different
          functions. The 14 emitter finger
          interdigitated geometry yields an
          intermediate sized transistor with
          impedances that are easy to match
          for low noise and moderate power
          applications. This device is de-
          signed for use in low noise,
          wideband amplifier, mixer and
          oscillator applications in the VHF,
          UHF, and microwave frequencies.
          An optimum noise match near 50
          at 1 GHz , makes this device easy
          to use as a low noise amplifier.
          The AT-41410 bipolar transistor is
          fabricated using Hewlett-Packard’s
          10 GHz fT Self-Aligned-Transistor
          (SAT) process. The die is nitride
          passivated for surface protection.
          Excellent device uniformity,
          performance and reliability are
          produced by the use of ion-
          implantation, self-alignment
          techniques, and gold metalization
          in the fabrication of this device.
          5965-8923E
          相關(guān)PDF資料
          PDF描述
          AT-41410 C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
          AT-41411-TR1G C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
          AT-41411-TR2 C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
          AT-41411-BLKG C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
          AT-41411-TR1 C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
          相關(guān)代理商/技術(shù)參數(shù)
          參數(shù)描述
          AT41411 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50MA I(C) | SOT-143
          AT-41411 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Surface Mount Low Noise Silicon Bipolar Transistor Chip
          AT-41411-BLK 制造商:AGILENT 制造商全稱:AGILENT 功能描述:Surface Mount Low Noise Silicon Bipolar Transistor Chip
          AT-41411-BLKG 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
          AT-41411-TR1 制造商:Hewlett Packard Co 功能描述: